XJIPC OpenIR  > 材料物理与化学研究室
Leakage current mechanisms of ultrathin high-k Er2O3 gate dielectric film
Wu, Deqi; Yao, Jincheng; Zhao, Hongsheng; Chang, Aimin; Li, Feng
2009
发表期刊Journal of Semiconductors
ISSN16744926
卷号30期号:10页码:21-26
摘要A series of high dielectric material Er2O3 thin films with different thicknesses were deposited on p-type Si (100) substrate by pulse laser deposition at different temperatures. Phase structures of the films were determined by means of X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM). Leakage current density was measured with an HP4142B semiconductor parameter analyzer. The XRD and HRTEM results reveal that Er2O3 thin films deposited below 400 °C are amorphous, while films deposited from 400 to 840 ° are well crystallized with (111)-preferential crystallographic orientation. I-V curves show that, for ultrathin crystalline Er2O3 films, the leakage current density increases by almost one order of magnitude from 6.20 × 10 -5 to 6.56 × 10-4 A/cm2, when the film thickness decreases by only 1.9 nm from 5.7 to 3.8 nm. However the leakage current density of ultrathin amorphous Er2O3 films with a thickness of 3.8 nm is only 1.73 × 10-5 A/cm2. Finally, analysis of leakage current density showed that leakage of ultrathin Er2O3 films at high field is mainly caused by Fowler-Nordheim tunneling, and the large leakage of ultrathin crystalline Er2O3 films could arise from impurity defects at the grain boundary.
关键词Er_2o_3 High-kappa Gate Dielectrics Leakage Current Leakage Current Mechanisms
DOI10.1088/1674-4926/30/10/103003
收录类别EI
引用统计
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/4168
专题材料物理与化学研究室
通讯作者Chang, Aimin
作者单位Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Graduate University, Chinese Academy of Sciences, Beijing 100049, China
推荐引用方式
GB/T 7714
Wu, Deqi,Yao, Jincheng,Zhao, Hongsheng,et al. Leakage current mechanisms of ultrathin high-k Er2O3 gate dielectric film[J]. Journal of Semiconductors,2009,30(10):21-26.
APA Wu, Deqi,Yao, Jincheng,Zhao, Hongsheng,Chang, Aimin,&Li, Feng.(2009).Leakage current mechanisms of ultrathin high-k Er2O3 gate dielectric film.Journal of Semiconductors,30(10),21-26.
MLA Wu, Deqi,et al."Leakage current mechanisms of ultrathin high-k Er2O3 gate dielectric film".Journal of Semiconductors 30.10(2009):21-26.
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
Leakage current mech(1210KB)期刊论文作者接受稿开放获取CC BY-NC-SA浏览 请求全文
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Wu, Deqi]的文章
[Yao, Jincheng]的文章
[Zhao, Hongsheng]的文章
百度学术
百度学术中相似的文章
[Wu, Deqi]的文章
[Yao, Jincheng]的文章
[Zhao, Hongsheng]的文章
必应学术
必应学术中相似的文章
[Wu, Deqi]的文章
[Yao, Jincheng]的文章
[Zhao, Hongsheng]的文章
相关权益政策
暂无数据
收藏/分享
文件名: Leakage current mechanisms of ultrathin high-k Er2O3 gate dielectric film.pdf
格式: Adobe PDF
此文件暂不支持浏览
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。