XJIPC OpenIR  > 材料物理与化学研究室
Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs
Cui, Jiangwei; Xue, Yaoguo; Yu, Xuefeng; Ren, Diyuan; Lu, Jian; Zhang, Xingyao
2012
Source PublicationJournal of Semiconductors
ISSN16744926
Volume33Issue:1Pages:64-67
Abstract

Total dose irradiation and the hot-carrier effects of sub-micro NMOSFETs are studied. The results show that the manifestations of damage caused by these two effects are quite different, though the principles of damage formation are somewhat similar. For the total dose irradiation effect, the most notable damage lies in the great increase of the off-state leakage current. As to the hot-carrier effect, most changes come from the decrease of the output characteristics curves as well as the decrease of trans-conductance. It is considered that the oxide-trapped and interface-trapped charges related to STI increase the current during irradiation, while the negative charges generated in the gate oxide, as well as the interface-trapped charges at the gate interface, cause the degradation of the hot-carrier effect. Different aspects should be considered when the device is generally hardened against these two effects.

DOI10.1088/1674-4926/33/1/014006
Indexed ByEI
Citation statistics
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/4165
Collection材料物理与化学研究室
Corresponding AuthorCui, Jiangwei
Affiliation1.Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
2.Xinjiang Key Laboratory of Electric Information Materials and Devices, Urumuqi 830011, China
3.Graduate University of the Chinese Academy of Sciences, Beijing 100049, China
4.Xi'An Microelectronic Technology Institute, Xi'an 710055, China
Recommended Citation
GB/T 7714
Cui, Jiangwei,Xue, Yaoguo,Yu, Xuefeng,et al. Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs[J]. Journal of Semiconductors,2012,33(1):64-67.
APA Cui, Jiangwei,Xue, Yaoguo,Yu, Xuefeng,Ren, Diyuan,Lu, Jian,&Zhang, Xingyao.(2012).Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs.Journal of Semiconductors,33(1),64-67.
MLA Cui, Jiangwei,et al."Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs".Journal of Semiconductors 33.1(2012):64-67.
Files in This Item:
File Name/Size DocType Version Access License
Total dose irradiati(288KB)期刊论文作者接受稿开放获取CC BY-NC-SAView Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Cui, Jiangwei]'s Articles
[Xue, Yaoguo]'s Articles
[Yu, Xuefeng]'s Articles
Baidu academic
Similar articles in Baidu academic
[Cui, Jiangwei]'s Articles
[Xue, Yaoguo]'s Articles
[Yu, Xuefeng]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Cui, Jiangwei]'s Articles
[Xue, Yaoguo]'s Articles
[Yu, Xuefeng]'s Articles
Terms of Use
No data!
Social Bookmark/Share
File name: Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs.pdf
Format: Adobe PDF
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.