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题名: Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs
作者: Cui, Jiangwei; Xue, Yaoguo; Yu, Xuefeng; Ren, Diyuan; Lu, Jian; Zhang, Xingyao
通讯作者: Cui, J.
刊名: Journal of Semiconductors
发表日期: 2012
DOI: 10.1088/1674-4926/33/1/014006
卷: 33, 期:1
收录类别: EI
摘要: Total dose irradiation and the hot-carrier effects of sub-micro NMOSFETs are studied. The results show that the manifestations of damage caused by these two effects are quite different, though the principles of damage formation are somewhat similar. For the total dose irradiation effect, the most notable damage lies in the great increase of the off-state leakage current. As to the hot-carrier effect, most changes come from the decrease of the output characteristics curves as well as the decrease of trans-conductance. It is considered that the oxide-trapped and interface-trapped charges related to STI increase the current during irradiation, while the negative charges generated in the gate oxide, as well as the interface-trapped charges at the gate interface, cause the degradation of the hot-carrier effect. Different aspects should be considered when the device is generally hardened against these two effects.
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内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/4165
Appears in Collections:材料物理与化学研究室_期刊论文

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作者单位: Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Key Laboratory of Electric Information Materials and Devices, Urumuqi 830011, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;Xi'An Microelectronic Technology Institute, Xi'an 710055, China

Recommended Citation:
Cui, Jiangwei,Xue, Yaoguo,Yu, Xuefeng,et al. Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs[J]. Journal of Semiconductors,2012,33(1).
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