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Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs
Cui, Jiangwei; Xue, Yaoguo; Yu, Xuefeng; Ren, Diyuan; Lu, Jian; Zhang, Xingyao; Cui, J.
2012
发表期刊Journal of Semiconductors
ISSN16744926
卷号33期号:1
摘要Total dose irradiation and the hot-carrier effects of sub-micro NMOSFETs are studied. The results show that the manifestations of damage caused by these two effects are quite different, though the principles of damage formation are somewhat similar. For the total dose irradiation effect, the most notable damage lies in the great increase of the off-state leakage current. As to the hot-carrier effect, most changes come from the decrease of the output characteristics curves as well as the decrease of trans-conductance. It is considered that the oxide-trapped and interface-trapped charges related to STI increase the current during irradiation, while the negative charges generated in the gate oxide, as well as the interface-trapped charges at the gate interface, cause the degradation of the hot-carrier effect. Different aspects should be considered when the device is generally hardened against these two effects.
DOI10.1088/1674-4926/33/1/014006
收录类别EI
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文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/4165
专题材料物理与化学研究室
通讯作者Cui, J.
作者单位Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Key Laboratory of Electric Information Materials and Devices, Urumuqi 830011, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;Xi'An Microelectronic Technology Institute, Xi'an 710055, China
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GB/T 7714
Cui, Jiangwei,Xue, Yaoguo,Yu, Xuefeng,et al. Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs[J]. Journal of Semiconductors,2012,33(1).
APA Cui, Jiangwei.,Xue, Yaoguo.,Yu, Xuefeng.,Ren, Diyuan.,Lu, Jian.,...&Cui, J..(2012).Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs.Journal of Semiconductors,33(1).
MLA Cui, Jiangwei,et al."Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs".Journal of Semiconductors 33.1(2012).
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