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题名: The enhanced low dose rate sensitivity of a linear voltage regulator with different biases
作者: Wang, Yiyuan; Lu, Wu; Ren, Diyuan; Guo, Qi; Yu, Xuefeng; Gao, Bo
通讯作者: Lu, W.
刊名: Journal of Semiconductors
发表日期: 2011
DOI: 10.1088/1674-4926/32/3/034007
卷: 32, 期:3
收录类别: EI
摘要: A linear voltage regulator was irradiated by 60Co γ at high and low dose rates with two bias conditions to investigate the dose rate effect. The devices exhibit enhanced low dose rate sensitivity (ELDRS) under both biases. Comparing the enhancement factors between zero and working biases, it was found that the ELDRS is more severe under zero bias conditions. This confirms that the ELDRS is related to the low electric field in a bipolar structure. The reasons for the change in the line regulation and the maximum drive current were analyzed by combining the principle of linear voltage regulator with irradiation response of the transistors and error amplifier in the regulator. This may be helpful for designing radiation hardened devices.
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内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/4164
Appears in Collections:材料物理与化学研究室_期刊论文

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作者单位: Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China

Recommended Citation:
Wang, Yiyuan,Lu, Wu,Ren, Diyuan,et al. The enhanced low dose rate sensitivity of a linear voltage regulator with different biases[J]. Journal of Semiconductors,2011,32(3).
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