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The enhanced low dose rate sensitivity of a linear voltage regulator with different biases
Wang, Yiyuan; Lu, Wu; Ren, Diyuan; Guo, Qi; Yu, Xuefeng; Gao, Bo; Lu, W.
2011
发表期刊Journal of Semiconductors
ISSN16744926
卷号32期号:3
摘要A linear voltage regulator was irradiated by 60Co γ at high and low dose rates with two bias conditions to investigate the dose rate effect. The devices exhibit enhanced low dose rate sensitivity (ELDRS) under both biases. Comparing the enhancement factors between zero and working biases, it was found that the ELDRS is more severe under zero bias conditions. This confirms that the ELDRS is related to the low electric field in a bipolar structure. The reasons for the change in the line regulation and the maximum drive current were analyzed by combining the principle of linear voltage regulator with irradiation response of the transistors and error amplifier in the regulator. This may be helpful for designing radiation hardened devices.
DOI10.1088/1674-4926/32/3/034007
收录类别EI
WOS记录号CSCD:4391500
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文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/4164
专题材料物理与化学研究室
通讯作者Lu, W.
作者单位Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China
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Wang, Yiyuan,Lu, Wu,Ren, Diyuan,et al. The enhanced low dose rate sensitivity of a linear voltage regulator with different biases[J]. Journal of Semiconductors,2011,32(3).
APA Wang, Yiyuan.,Lu, Wu.,Ren, Diyuan.,Guo, Qi.,Yu, Xuefeng.,...&Lu, W..(2011).The enhanced low dose rate sensitivity of a linear voltage regulator with different biases.Journal of Semiconductors,32(3).
MLA Wang, Yiyuan,et al."The enhanced low dose rate sensitivity of a linear voltage regulator with different biases".Journal of Semiconductors 32.3(2011).
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