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Total dose ionizing irradiation effects on a static random access memory field programmable gate array
Gao, Bo; Yu, Xuefeng; Ren, Diyuan; Li, Yudong; Sun, Jing; Cui, Jiangwei; Wang, Yiyuan; Li, Ming
2012
Source PublicationJournal of Semiconductors
ISSN16744926
Volume33Issue:3Pages:42-47
Abstract

SRAM-based FPGA devices are irradiated by 60Co γ rays at various dose rates to investigate total dose effects and the evaluation method. The dependences of typical electrical parameters such as static power current, peak - peak value, and delay time on total dose are discussed. The experiment results show that the static power current of the devices reduces rapidly at room temperature (25°C) and high temperature (80°C) annealing after irradiation. When the device is irradiated at a low dose rate, the delay time and peak - peak value change unobviously with an increase in the accumulated dose. In contrast, the function parameters completely fail at 2.1 kGy(Si) when the dose rate increases to 0.71 Gy(Si)/s.

DOI10.1088/1674-4926/33/3/034007
Indexed ByEI
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Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/4162
Collection材料物理与化学研究室
Corresponding AuthorYu, Xuefeng
Affiliation1.Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
2.Xinjiang Province Key Laboratory of Electronics Information Material and Device, Urumqi 830011, China
3.Graduate University, Chinese Academy of Sciences, Beijing 100049, China
Recommended Citation
GB/T 7714
Gao, Bo,Yu, Xuefeng,Ren, Diyuan,et al. Total dose ionizing irradiation effects on a static random access memory field programmable gate array[J]. Journal of Semiconductors,2012,33(3):42-47.
APA Gao, Bo.,Yu, Xuefeng.,Ren, Diyuan.,Li, Yudong.,Sun, Jing.,...&Li, Ming.(2012).Total dose ionizing irradiation effects on a static random access memory field programmable gate array.Journal of Semiconductors,33(3),42-47.
MLA Gao, Bo,et al."Total dose ionizing irradiation effects on a static random access memory field programmable gate array".Journal of Semiconductors 33.3(2012):42-47.
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