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题名: Total dose ionizing irradiation effects on a static random access memory field programmable gate array
作者: Gao, Bo; Yu, Xuefeng; Ren, Diyuan; Li, Yudong; Sun, Jing; Cui, Jiangwei; Wang, Yiyuan; Li, Ming
通讯作者: Yu, X.
刊名: Journal of Semiconductors
发表日期: 2012
DOI: 10.1088/1674-4926/33/3/034007
卷: 33, 期:3
收录类别: EI
摘要: SRAM-based FPGA devices are irradiated by 60Co γ rays at various dose rates to investigate total dose effects and the evaluation method. The dependences of typical electrical parameters such as static power current, peak - peak value, and delay time on total dose are discussed. The experiment results show that the static power current of the devices reduces rapidly at room temperature (25°C) and high temperature (80°C) annealing after irradiation. When the device is irradiated at a low dose rate, the delay time and peak - peak value change unobviously with an increase in the accumulated dose. In contrast, the function parameters completely fail at 2.1 kGy(Si) when the dose rate increases to 0.71 Gy(Si)/s.
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内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/4162
Appears in Collections:材料物理与化学研究室_期刊论文

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作者单位: Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Province Key Laboratory of Electronics Information Material and Device, Urumqi 830011, China;Graduate University, Chinese Academy of Sciences, Beijing 100049, China

Recommended Citation:
Gao, Bo,Yu, Xuefeng,Ren, Diyuan,et al. Total dose ionizing irradiation effects on a static random access memory field programmable gate array[J]. Journal of Semiconductors,2012,33(3).
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