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题名: Double humps and radiation effects of SOI NMOSFET
作者: Cui, Jiangwei; Yu, Xuefeng; Ren, Diyuan; He, Chengfa; Gao, Bo; Li, Ming; Lu, Jian
刊名: Journal of Semiconductors
发表日期: 2011
DOI: 10.1088/1674-4926/32/6/064006
卷: 32, 期:6
收录类别: EI
摘要: Radiation experiments have been carried out with a SOI NMOSFET. The behavior of double humps was studied under irradiation. The characterization of the hump was demonstrated. The results have shown that the shape of the hump changed along with the total dose and the reason for this was analyzed. In addition, the coupling effect of the back-gate transistor was more important for the main transistor than the parasitic transistor.
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内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/4158
Appears in Collections:材料物理与化学研究室_期刊论文

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作者单位: Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China

Recommended Citation:
Cui, Jiangwei,Yu, Xuefeng,Ren, Diyuan,et al. Double humps and radiation effects of SOI NMOSFET[J]. Journal of Semiconductors,2011,32(6).
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