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Double humps and radiation effects of SOI NMOSFET
Cui, Jiangwei; Yu, Xuefeng; Ren, Diyuan; He, Chengfa; Gao, Bo; Li, Ming; Lu, Jian
2011
发表期刊Journal of Semiconductors
ISSN16744926
卷号32期号:6
摘要Radiation experiments have been carried out with a SOI NMOSFET. The behavior of double humps was studied under irradiation. The characterization of the hump was demonstrated. The results have shown that the shape of the hump changed along with the total dose and the reason for this was analyzed. In addition, the coupling effect of the back-gate transistor was more important for the main transistor than the parasitic transistor.
DOI10.1088/1674-4926/32/6/064006
收录类别EI
WOS记录号CSCD:4391584
引用统计
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/4158
专题材料物理与化学研究室
作者单位Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China
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GB/T 7714
Cui, Jiangwei,Yu, Xuefeng,Ren, Diyuan,et al. Double humps and radiation effects of SOI NMOSFET[J]. Journal of Semiconductors,2011,32(6).
APA Cui, Jiangwei.,Yu, Xuefeng.,Ren, Diyuan.,He, Chengfa.,Gao, Bo.,...&Lu, Jian.(2011).Double humps and radiation effects of SOI NMOSFET.Journal of Semiconductors,32(6).
MLA Cui, Jiangwei,et al."Double humps and radiation effects of SOI NMOSFET".Journal of Semiconductors 32.6(2011).
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