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题名: Co-60 gamma-radiation effects on the ideality factor of AlxGa1-xN p-i-n solar-blind detector with high content of aluminum
作者: Zhang, Xiao-Fu; Li, Yu-Dong; Guo, Qi; Luo, Mu-Chang; He, Cheng-Fa; Yu, Xin; Shen, Zhi-Hui; Zhang, Xing-Yao; Deng, Wei; Wu, Zheng-Xin
通讯作者: Guo, Q.
关键词: high Al content AlxGa1-xN ; gamma-ray radiation effects ; ideality factor ; Ohmic contact
刊名: Wuli Xuebao/Acta Physica Sinica
发表日期: 2013
DOI: 10.7498/aps.62.076106
卷: 62, 期:7
收录类别: SCI
摘要: High Al content AlxGa1-xN solar-blind photodetector and Si p-i-n visible light detector were irradiated with 60Coγ-rays up to 0.1, 1, 10 Mrad(Si). With the increase of total radiation dose, the ideality factor of AlxGa1-xN p-i-n diode saw a significant rise and the ideality factor n is grater than 2 with a total dose up to 10 Mrad(Si); the ideality factor of Si p-i-n diode, however, changed only slightly even up to 10 Mrad(Si). The degradation of AlxGa1-xN p-i-n diode might be attributed to the deterioration of Ohmic contacts, however, to some extent, the slight increase of the Si p-i-n diode might be due to the degradation of the insensitive layer.
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内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/4155
Appears in Collections:新疆维吾尔自治区电子信息材料与器件重点实验室_期刊论文

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作者单位: Univ Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China;Chongqing Optoelect Res Inst, Chongqing 400060, Peoples R China

Recommended Citation:
Zhang, Xiao-Fu,Li, Yu-Dong,Guo, Qi,et al. Co-60 gamma-radiation effects on the ideality factor of AlxGa1-xN p-i-n solar-blind detector with high content of aluminum[J]. Wuli Xuebao/Acta Physica Sinica,2013,62(7).
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文件名: Co-60 gamma-radiation effects on the ideality factor of AlxGa1-xN p-i-n solar-blind detector with high content of aluminum.pdf
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