Total ionizing dose effects on a radiation-induced BiMOS analog-to-digital converter
Wu, Xue; Lu, Wu; Wang, Yiyuan; Xu, Jialing; Zhang, Leqing; Lu, Jian; Yu, Xin; Zhang, Xingyao; Hu, Tianle; Lu, W
2013
Source PublicationJournal of Semiconductors
ISSN16744926
Volume34Issue:1
Abstract

The total dose effect of an AD678 with a BiMOS process is studied. We investigate the performance degradation of the device in different bias states and at several dose rates. The results show that an AD678 can endure 3 krad(Si) at low dose rate and 5 krad(Si) at a high dose rate for static bias. The sensitive parameters to the bias states also differ distinctly. We find that the degradation is more serious on static bias. The underlying mechanisms are discussed in detail.

Indexed ByEI
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/4154
Collection新疆维吾尔自治区电子信息材料与器件重点实验室
材料物理与化学研究室
Corresponding AuthorLu, W
AffiliationXinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China;University of Chinese Academy of Sciences, Beijing 100049, China;Xinjiang University, Urumqi 830046, China
Recommended Citation
GB/T 7714
Wu, Xue,Lu, Wu,Wang, Yiyuan,et al. Total ionizing dose effects on a radiation-induced BiMOS analog-to-digital converter[J]. Journal of Semiconductors,2013,34(1).
APA Wu, Xue.,Lu, Wu.,Wang, Yiyuan.,Xu, Jialing.,Zhang, Leqing.,...&Lu, W.(2013).Total ionizing dose effects on a radiation-induced BiMOS analog-to-digital converter.Journal of Semiconductors,34(1).
MLA Wu, Xue,et al."Total ionizing dose effects on a radiation-induced BiMOS analog-to-digital converter".Journal of Semiconductors 34.1(2013).
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