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题名: Total ionizing dose effects on a radiation-induced BiMOS analog-to-digital converter
作者: Wu, Xue; Lu, Wu; Wang, Yiyuan; Xu, Jialing; Zhang, Leqing; Lu, Jian; Yu, Xin; Zhang, Xingyao; Hu, Tianle
通讯作者: Lu, W
刊名: Journal of Semiconductors
发表日期: 2013
卷: 34, 期:1
收录类别: EI
摘要: The total dose effect of an AD678 with a BiMOS process is studied. We investigate the performance degradation of the device in different bias states and at several dose rates. The results show that an AD678 can endure 3 krad(Si) at low dose rate and 5 krad(Si) at a high dose rate for static bias. The sensitive parameters to the bias states also differ distinctly. We find that the degradation is more serious on static bias. The underlying mechanisms are discussed in detail.
内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/4154
Appears in Collections:新疆维吾尔自治区电子信息材料与器件重点实验室_期刊论文

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作者单位: Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China;University of Chinese Academy of Sciences, Beijing 100049, China;Xinjiang University, Urumqi 830046, China

Recommended Citation:
Wu, Xue,Lu, Wu,Wang, Yiyuan,et al. Total ionizing dose effects on a radiation-induced BiMOS analog-to-digital converter[J]. Journal of Semiconductors,2013,34(1).
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文件名: Total ionizing dose effects on a radiation-induced BiMOS analog-to-digital converter.pdf
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