Total ionizing dose effects on a radiation-induced BiMOS analog-to-digital converter
Wu, Xue; Lu, Wu; Wang, Yiyuan; Xu, Jialing; Zhang, Leqing; Lu, Jian; Yu, Xin; Zhang, Xingyao; Hu, Tianle; Lu, W
2013
发表期刊Journal of Semiconductors
ISSN16744926
卷号34期号:1
摘要

The total dose effect of an AD678 with a BiMOS process is studied. We investigate the performance degradation of the device in different bias states and at several dose rates. The results show that an AD678 can endure 3 krad(Si) at low dose rate and 5 krad(Si) at a high dose rate for static bias. The sensitive parameters to the bias states also differ distinctly. We find that the degradation is more serious on static bias. The underlying mechanisms are discussed in detail.

收录类别EI
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/4154
专题新疆维吾尔自治区电子信息材料与器件重点实验室
通讯作者Lu, W
作者单位Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China;University of Chinese Academy of Sciences, Beijing 100049, China;Xinjiang University, Urumqi 830046, China
推荐引用方式
GB/T 7714
Wu, Xue,Lu, Wu,Wang, Yiyuan,et al. Total ionizing dose effects on a radiation-induced BiMOS analog-to-digital converter[J]. Journal of Semiconductors,2013,34(1).
APA Wu, Xue.,Lu, Wu.,Wang, Yiyuan.,Xu, Jialing.,Zhang, Leqing.,...&Lu, W.(2013).Total ionizing dose effects on a radiation-induced BiMOS analog-to-digital converter.Journal of Semiconductors,34(1).
MLA Wu, Xue,et al."Total ionizing dose effects on a radiation-induced BiMOS analog-to-digital converter".Journal of Semiconductors 34.1(2013).
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