Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters
Wang, Xin; Lu, Wu; Guo, Qi; Wu, Xue; Xi, Shanbin; Deng, Wei; Cui, Jiangwei; Zhang, Jinxin
2013
发表期刊Journal of Semiconductors
ISSN16744926
卷号34期号:12页码:57-63
摘要

A digital-to-analog converter (DAC) in CBCMOS technology was irradiated by 60Co γ-rays at various dose rates and biases for investigating the ionizing radiation response of the DAC. The radiation responses show that the function curve and the key electrical parameters of the DAC in CBCMOS technology are sensitive to total dose and dose rates. Under different bias conditions, the radiation failure levels were different, and the radiation damage under operation bias conditions was more severe. Finally, test results were preliminarily analyzed by relating the failure mode to DAC architecture and process technology.

收录类别EI
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/4153
专题新疆维吾尔自治区电子信息材料与器件重点实验室
材料物理与化学研究室
通讯作者Lu, Wu
作者单位Xinjiang Technical Institute of Physics & Chemistry,Chinese Academy of SciencesXinjiang Key Laboratory of Electronic Information Materials and DevicesUniversity of Chinese Academy of Sciences
推荐引用方式
GB/T 7714
Wang, Xin,Lu, Wu,Guo, Qi,et al. Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters[J]. Journal of Semiconductors,2013,34(12):57-63.
APA Wang, Xin.,Lu, Wu.,Guo, Qi.,Wu, Xue.,Xi, Shanbin.,...&Zhang, Jinxin.(2013).Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters.Journal of Semiconductors,34(12),57-63.
MLA Wang, Xin,et al."Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters".Journal of Semiconductors 34.12(2013):57-63.
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