Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters
Wang, Xin; Lu, Wu; Guo, Qi; Wu, Xue; Xi, Shanbin; Deng, Wei; Cui, Jiangwei; Zhang, Jinxin
2013
Source PublicationJournal of Semiconductors
ISSN16744926
Volume34Issue:12Pages:57-63
Abstract

A digital-to-analog converter (DAC) in CBCMOS technology was irradiated by 60Co γ-rays at various dose rates and biases for investigating the ionizing radiation response of the DAC. The radiation responses show that the function curve and the key electrical parameters of the DAC in CBCMOS technology are sensitive to total dose and dose rates. Under different bias conditions, the radiation failure levels were different, and the radiation damage under operation bias conditions was more severe. Finally, test results were preliminarily analyzed by relating the failure mode to DAC architecture and process technology.

Indexed ByEI
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/4153
Collection新疆维吾尔自治区电子信息材料与器件重点实验室
材料物理与化学研究室
Corresponding AuthorLu, Wu
AffiliationXinjiang Technical Institute of Physics & Chemistry,Chinese Academy of SciencesXinjiang Key Laboratory of Electronic Information Materials and DevicesUniversity of Chinese Academy of Sciences
Recommended Citation
GB/T 7714
Wang, Xin,Lu, Wu,Guo, Qi,et al. Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters[J]. Journal of Semiconductors,2013,34(12):57-63.
APA Wang, Xin.,Lu, Wu.,Guo, Qi.,Wu, Xue.,Xi, Shanbin.,...&Zhang, Jinxin.(2013).Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters.Journal of Semiconductors,34(12),57-63.
MLA Wang, Xin,et al."Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters".Journal of Semiconductors 34.12(2013):57-63.
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