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题名: Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters
作者: Wang, Xin; Lu, Wu; Guo, Qi; Wu, Xue; Xi, Shanbin; Deng, Wei; Cui, Jiangwei; Zhang, Jinxin
通讯作者: Lu, W.
刊名: Journal of Semiconductors
发表日期: 2013
卷: 34, 期:12
收录类别: EI
摘要: A digital-to-analog converter (DAC) in CBCMOS technology was irradiated by 60Co γ-rays at various dose rates and biases for investigating the ionizing radiation response of the DAC. The radiation responses show that the function curve and the key electrical parameters of the DAC in CBCMOS technology are sensitive to total dose and dose rates. Under different bias conditions, the radiation failure levels were different, and the radiation damage under operation bias conditions was more severe. Finally, test results were preliminarily analyzed by relating the failure mode to DAC architecture and process technology.
内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/4153
Appears in Collections:新疆维吾尔自治区电子信息材料与器件重点实验室_期刊论文

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作者单位: Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China;University of Chinese Academy of Sciences, Beijing 100049, China

Recommended Citation:
Wang, Xin,Lu, Wu,Guo, Qi,et al. Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters[J]. Journal of Semiconductors,2013,34(12).
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文件名: Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters.pdf
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