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Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress
Zheng, Qiwen; Yu, Xuefeng; Cui, Jiangwei; Guo, Qi; Cong, Zhongchao; Zhang, Xingyao; Deng, Wei; Zhang, Xiaofu; Wu, Zhengxin; yuxf
2013
发表期刊Journal of Semiconductors
ISSN16744926
卷号34期号:7页码:074008-1-074008-6
摘要The hot-carrier effect characteristic in a deep submicron partially depleted SOI NMOSFET is investigated. Obvious hot-carrier degradation is observed under off-state stress. The hot-carrier damage is supposed to be induced by the parasitic bipolar effects of a float SOI device. The back channel also suffers degradation from the hot carrier in the drain depletion region as well as the front channel. At low gate voltage, there is a hump in the sub-threshold curve of the back gate transistor, and it does not shift in the same way as the main transistor under stress. While under the same condition, there is a more severe hot-carrier effect with a shorter channel transistor. The reasons for those phenomena are discussed in detail.
关键词Silicon-on-insulator Hot-carrier Effect Hump Back Gate
DOI10.1088/1674-4926/34/7/074008
收录类别EI
引用统计
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/4151
专题材料物理与化学研究室
通讯作者yuxf
作者单位Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumuqi 830011, China;Xinjiang Key Laboratory of Electric Information Materials and Devices, Urumuqi 830011, China;University of Chinese Academy of Sciences, Beijing 100049, China
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GB/T 7714
Zheng, Qiwen,Yu, Xuefeng,Cui, Jiangwei,et al. Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress[J]. Journal of Semiconductors,2013,34(7):074008-1-074008-6.
APA Zheng, Qiwen.,Yu, Xuefeng.,Cui, Jiangwei.,Guo, Qi.,Cong, Zhongchao.,...&yuxf.(2013).Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress.Journal of Semiconductors,34(7),074008-1-074008-6.
MLA Zheng, Qiwen,et al."Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress".Journal of Semiconductors 34.7(2013):074008-1-074008-6.
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