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题名: Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress
作者: Zheng, Qiwen; Yu, Xuefeng; Cui, Jiangwei; Guo, Qi; Cong, Zhongchao; Zhang, Xingyao; Deng, Wei; Zhang, Xiaofu; Wu, Zhengxin
通讯作者: yuxf
关键词: silicon-on-insulator ; hot-carrier effect ; hump ; back gate
刊名: Journal of Semiconductors
发表日期: 2013
DOI: 10.1088/1674-4926/34/7/074008
卷: 34, 期:7, 页:074008-1-074008-6
收录类别: EI
摘要: The hot-carrier effect characteristic in a deep submicron partially depleted SOI NMOSFET is investigated. Obvious hot-carrier degradation is observed under off-state stress. The hot-carrier damage is supposed to be induced by the parasitic bipolar effects of a float SOI device. The back channel also suffers degradation from the hot carrier in the drain depletion region as well as the front channel. At low gate voltage, there is a hump in the sub-threshold curve of the back gate transistor, and it does not shift in the same way as the main transistor under stress. While under the same condition, there is a more severe hot-carrier effect with a shorter channel transistor. The reasons for those phenomena are discussed in detail.
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内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/4151
Appears in Collections:材料物理与化学研究室_期刊论文

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作者单位: Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumuqi 830011, China;Xinjiang Key Laboratory of Electric Information Materials and Devices, Urumuqi 830011, China;University of Chinese Academy of Sciences, Beijing 100049, China

Recommended Citation:
Zheng, Qiwen,Yu, Xuefeng,Cui, Jiangwei,et al. Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress[J]. Journal of Semiconductors,2013,34(7):074008-1-074008-6.
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