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Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress
Zheng, Qiwen; Yu, Xuefeng; Cui, Jiangwei; Guo, Qi; Cong, Zhongchao; Zhang, Xingyao; Deng, Wei; Zhang, Xiaofu; Wu, Zhengxin
2013
发表期刊Journal of Semiconductors
ISSN16744926
卷号34期号:7页码:074008-1-074008-6
摘要

The hot-carrier effect characteristic in a deep submicron partially depleted SOI NMOSFET is investigated. Obvious hot-carrier degradation is observed under off-state stress. The hot-carrier damage is supposed to be induced by the parasitic bipolar effects of a float SOI device. The back channel also suffers degradation from the hot carrier in the drain depletion region as well as the front channel. At low gate voltage, there is a hump in the sub-threshold curve of the back gate transistor, and it does not shift in the same way as the main transistor under stress. While under the same condition, there is a more severe hot-carrier effect with a shorter channel transistor. The reasons for those phenomena are discussed in detail.

关键词Silicon-on-insulator Hot-carrier Effect Hump Back Gate
DOI10.1088/1674-4926/34/7/074008
收录类别EI
引用统计
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/4151
专题材料物理与化学研究室
通讯作者Yu, Xuefeng
作者单位1.Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumuqi 830011, China
2.Xinjiang Key Laboratory of Electric Information Materials and Devices, Urumuqi 830011, China
3.University of Chinese Academy of Sciences, Beijing 100049, China
推荐引用方式
GB/T 7714
Zheng, Qiwen,Yu, Xuefeng,Cui, Jiangwei,et al. Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress[J]. Journal of Semiconductors,2013,34(7):074008-1-074008-6.
APA Zheng, Qiwen.,Yu, Xuefeng.,Cui, Jiangwei.,Guo, Qi.,Cong, Zhongchao.,...&Wu, Zhengxin.(2013).Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress.Journal of Semiconductors,34(7),074008-1-074008-6.
MLA Zheng, Qiwen,et al."Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress".Journal of Semiconductors 34.7(2013):074008-1-074008-6.
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