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Electron-induced damage to NPN transistors under different fluxes
Zheng Yuzhan; Lu Wu; Ren Diyuan; Guo Qi; Yu Xuefeng; Lue Xiaolong; Lu, W
2008
发表期刊NUCLEAR SCIENCE AND TECHNIQUES
ISSN1001-8042
卷号19期号:6页码:333-336
摘要Radiation damage of NPN transistors under different fluxes with electron energy of 1.5 MeV was investigated in this article. It has been shown that when NPN transistors were irradiated to a given fluence at different electron fluxes, the shift of base current was dependent on flux. With electron flux decreasing, the shift of base current becomes larger, while collector current almost keeps constant. Thus, more degradation of NPN transistors could be caused by low-electron-flux irradiation, similar to enhanced low-dose-rate sensitivity (ELDRS) of transistors under (60)Co gamma-irradiation. Finally, the underlying mechanisms were discussed here.
关键词Electron Flux Npn Transistor Radiation Damage
收录类别SCI
WOS记录号WOS:000263318600004
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文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/4083
专题材料物理与化学研究室
通讯作者Lu, W
作者单位Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China
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Zheng Yuzhan,Lu Wu,Ren Diyuan,et al. Electron-induced damage to NPN transistors under different fluxes[J]. NUCLEAR SCIENCE AND TECHNIQUES,2008,19(6):333-336.
APA Zheng Yuzhan.,Lu Wu.,Ren Diyuan.,Guo Qi.,Yu Xuefeng.,...&Lu, W.(2008).Electron-induced damage to NPN transistors under different fluxes.NUCLEAR SCIENCE AND TECHNIQUES,19(6),333-336.
MLA Zheng Yuzhan,et al."Electron-induced damage to NPN transistors under different fluxes".NUCLEAR SCIENCE AND TECHNIQUES 19.6(2008):333-336.
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