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Electron-induced damage to NPN transistors under different fluxes
Zheng Yuzhan; Lu Wu; Ren Diyuan; Guo Qi; Yu Xuefeng; Lue Xiaolong; Lu, W
2008
Source PublicationNUCLEAR SCIENCE AND TECHNIQUES
ISSN1001-8042
Volume19Issue:6Pages:333-336
AbstractRadiation damage of NPN transistors under different fluxes with electron energy of 1.5 MeV was investigated in this article. It has been shown that when NPN transistors were irradiated to a given fluence at different electron fluxes, the shift of base current was dependent on flux. With electron flux decreasing, the shift of base current becomes larger, while collector current almost keeps constant. Thus, more degradation of NPN transistors could be caused by low-electron-flux irradiation, similar to enhanced low-dose-rate sensitivity (ELDRS) of transistors under (60)Co gamma-irradiation. Finally, the underlying mechanisms were discussed here.
KeywordElectron Flux Npn Transistor Radiation Damage
Indexed BySCI
WOS IDWOS:000263318600004
Citation statistics
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/4083
Collection材料物理与化学研究室
Corresponding AuthorLu, W
AffiliationChinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China
Recommended Citation
GB/T 7714
Zheng Yuzhan,Lu Wu,Ren Diyuan,et al. Electron-induced damage to NPN transistors under different fluxes[J]. NUCLEAR SCIENCE AND TECHNIQUES,2008,19(6):333-336.
APA Zheng Yuzhan.,Lu Wu.,Ren Diyuan.,Guo Qi.,Yu Xuefeng.,...&Lu, W.(2008).Electron-induced damage to NPN transistors under different fluxes.NUCLEAR SCIENCE AND TECHNIQUES,19(6),333-336.
MLA Zheng Yuzhan,et al."Electron-induced damage to NPN transistors under different fluxes".NUCLEAR SCIENCE AND TECHNIQUES 19.6(2008):333-336.
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