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题名: Electron-induced damage to NPN transistors under different fluxes
作者: Zheng Yuzhan; Lu Wu; Ren Diyuan; Guo Qi; Yu Xuefeng; Lue Xiaolong
通讯作者: Lu, W
关键词: Electron flux ; NPN transistor ; Radiation damage
刊名: NUCLEAR SCIENCE AND TECHNIQUES
发表日期: 2008
卷: 19, 期:6, 页:333-336
收录类别: SCI
摘要: Radiation damage of NPN transistors under different fluxes with electron energy of 1.5 MeV was investigated in this article. It has been shown that when NPN transistors were irradiated to a given fluence at different electron fluxes, the shift of base current was dependent on flux. With electron flux decreasing, the shift of base current becomes larger, while collector current almost keeps constant. Thus, more degradation of NPN transistors could be caused by low-electron-flux irradiation, similar to enhanced low-dose-rate sensitivity (ELDRS) of transistors under (60)Co gamma-irradiation. Finally, the underlying mechanisms were discussed here.
内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/4083
Appears in Collections:材料物理与化学研究室_期刊论文

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作者单位: Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China

Recommended Citation:
Zheng Yuzhan,Lu Wu,Ren Diyuan,et al. Electron-induced damage to NPN transistors under different fluxes[J]. NUCLEAR SCIENCE AND TECHNIQUES,2008,19(6):333-336.
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