In this work, (Pb0.97La0.02)(Zr0.85Sn 0.12Ti0.03)O3 (PLZST 2/85/12/3) antiferroelectric (AFE) thin films with a thickness of ∼700 nm were successfully fabricated on (100)-oriented Nb-SrTiO3 single crystal via a sol-gel technique. X-ray diffraction and scanning electron microscopy results showed that the obtained AFE films had a highly (100)-preferred orientation and displayed a uniform surface microstructure. Electrical measurements, such as P-E loops, the electric-field, and temperature-dependent dielectric properties, demonstrated a mixture of AFE and FE phases in PLZST 2/85/12/3 films deposited on Nb-SrTiO3 substrates.
Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China;Inner Mongolia Univ Sci & Technol, Sch Mat & Met, Baotou 014010, Peoples R China;Tsinghua Univ, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China;Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China
Hao, Xihong,Zhai, Jiwei,Yue, Zhenxing,et al. Phase Transformation Properties of Highly (100)-Oriented PLZST 2/85/12/3 Antiferroelectric Thin Films Deposited on Nb-SrTiO3 Single-Crystal Substrates[J]. Journal of the American Ceramic Society,2011,94(9):2816-2818.