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Li~+对ZnO压敏陶瓷电性能和能带结构的影响
Alternative TitleEffect of Li+ dopant on the electrical properties and energy band structure of ZnO varistor ceramics
王发顶; 康雪雅
2009
Source Publication电子元件与材料
ISSN1001-2028
Volume28Issue:5Pages:30-32
Abstract采用氧化物固相合成法,制备了掺Li2CO3的ZnO压敏陶瓷.研究了掺Li2CO3量对ZnO压敏陶瓷电性能和能带结构的影响.结果表明:当x(Li2CO3)从0增加到0.50%时,压敏电位梯度从529 V/mm增大到2 170 V/mm.XRD测试发现,掺Li2CO3并未出现新相结构.晶界势垒高度揭示,ZnO晶粒尺寸的迅速减小是压敏电位梯度急剧增高的主要原因.Li+置换Zn2+,将会在禁带中价带的顶部形成附加的受主能级,使能带发生畸变.
Other AbstractLi_2CO_3-doped ZnO varistor ceramics were prepared using oxide solid phase synthesis method.The effects of dopant amount on the electrical properties and energy band of ZnO varistor ceramics were studied.The results show that the voltage gradient of ZnO varistor ceramics increases from 529 V/mm to 2 170 V/mm with increasing x (Li_2CO_3) from 0 to 0.50.Through measuring the barrier height at grain boundaries,it is found that the sharp decrease of ZnO grain size mainly contributes to the significant increase of voltage gradient.XRD analysis indicates that there is no new phase present in the ZnO varistor ceramics when Li_2CO_3 is doped.With the substitution of Zn~(2+) by Li~+,an additional acceptor level is formed in the band gap and nearby the top of valence band,inducing the distortion of energy band.
KeywordZno压敏陶瓷 li+掺杂 压敏电位梯度 晶界势垒高度 能带结构
Indexed ByCSCD
CSCD IDCSCD:3536824
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/3957
Collection材料物理与化学研究室
Affiliation中国科学院新疆理化技术研究所;中国科学院研究生院
Recommended Citation
GB/T 7714
王发顶,康雪雅. Li~+对ZnO压敏陶瓷电性能和能带结构的影响[J]. 电子元件与材料,2009,28(5):30-32.
APA 王发顶,&康雪雅.(2009).Li~+对ZnO压敏陶瓷电性能和能带结构的影响.电子元件与材料,28(5),30-32.
MLA 王发顶,et al."Li~+对ZnO压敏陶瓷电性能和能带结构的影响".电子元件与材料 28.5(2009):30-32.
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