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XJIPC OpenIR  > 中国科学院特殊环境功能材料与器件重点试验室  > 期刊论文
题名: Thermodynamic impact on total dose effect for semiconductor components
作者: Cong, Zhong-Chao; Yu, Xue-Feng; Cui, Jiang-Wei; Zheng, Qi-Wen; Guo, Qi; Sun, Jing; Zhou, Hang
通讯作者: Yu, X.-F
刊名: Faguang Xuebao/Chinese Journal of Luminescence
发表日期: 2014
卷: 35, 期:4, 页:465-469
收录类别: EI
摘要: The total dose irradiation experiments were conducted on commercial triodes and MOS transistors. The impacts of different radiation temperature on the radiation effect were compared when the other conditions were identical. For the same total dose, the base current and current gain of the triode, and the threshold voltage of the MOS transistor exist a big discrepancy according to the different radiation temperature. When the total dose is 100 krad(Si) and the radiation temperature is 25, 70, 100°C, the current gain reduction of the NPN triode is 71, 89, 113, and the threshold voltage degradation of the NMOS transistor is 3.53, 2.8, 2.82 V, respectively.
内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/3930
Appears in Collections:中国科学院特殊环境功能材料与器件重点试验室_期刊论文

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作者单位: Key Laboratory of Special Materials and Devices, The Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China ;Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China;University of Chinese Academy of Sciences, Beijing 100049, China

Recommended Citation:
Cong, Zhong-Chao,Yu, Xue-Feng,Cui, Jiang-Wei,et al. Thermodynamic impact on total dose effect for semiconductor components[J]. Faguang Xuebao/Chinese Journal of Luminescence,2014,35(4):465-469.
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