Thermodynamic impact on total dose effect for semiconductor components
Cong, Zhong-Chao; Yu, Xue-Feng; Cui, Jiang-Wei; Zheng, Qi-Wen; Guo, Qi; Sun, Jing; Zhou, Hang
2014
Source PublicationFaguang Xuebao/Chinese Journal of Luminescence
ISSN10007032
Volume35Issue:4Pages:465-469
Abstract

The total dose irradiation experiments were conducted on commercial triodes and MOS transistors. The impacts of different radiation temperature on the radiation effect were compared when the other conditions were identical. For the same total dose, the base current and current gain of the triode, and the threshold voltage of the MOS transistor exist a big discrepancy according to the different radiation temperature. When the total dose is 100 krad(Si) and the radiation temperature is 25, 70, 100°C, the current gain reduction of the NPN triode is 71, 89, 113, and the threshold voltage degradation of the NMOS transistor is 3.53, 2.8, 2.82 V, respectively.

Indexed ByEI
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/3930
Collection中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
Corresponding AuthorYu, Xue-Feng
Affiliation1.Key Laboratory of Special Materials and Devices, The Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
2.Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China
3.University of Chinese Academy of Sciences, Beijing 100049, China
Recommended Citation
GB/T 7714
Cong, Zhong-Chao,Yu, Xue-Feng,Cui, Jiang-Wei,et al. Thermodynamic impact on total dose effect for semiconductor components[J]. Faguang Xuebao/Chinese Journal of Luminescence,2014,35(4):465-469.
APA Cong, Zhong-Chao.,Yu, Xue-Feng.,Cui, Jiang-Wei.,Zheng, Qi-Wen.,Guo, Qi.,...&Zhou, Hang.(2014).Thermodynamic impact on total dose effect for semiconductor components.Faguang Xuebao/Chinese Journal of Luminescence,35(4),465-469.
MLA Cong, Zhong-Chao,et al."Thermodynamic impact on total dose effect for semiconductor components".Faguang Xuebao/Chinese Journal of Luminescence 35.4(2014):465-469.
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