Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation
Zheng, Qi-Wen; Yu, Xue-Feng; Cui, Jiang-Wei; Guo, Qi; Ren, Di-Yuan; Cong, Zhong-Chao; Zhou, Hang
2014
发表期刊Chinese Physics B
ISSN16741056
卷号23期号:10
摘要Pattern imprinting in deep sub-micron static random access memories (SRAMs) during total dose irradiation is investigated in detail. As the dose accumulates, the data pattern of memory cells loading during irradiation is gradually imprinted on their background data pattern. We build a relationship between the memory cell's static noise margin (SNM) and the background data, and study the influence of irradiation on the probability density function of ΔSNM, which is the difference between two data sides' SNMs, to discuss the reason for pattern imprinting. Finally, we demonstrate that, for micron and deep sub-micron devices, the mechanism of pattern imprinting is the bias-dependent threshold shift of the transistor, but for a deep sub-micron device the shift results from charge trapping in the shallow trench isolation (STI) oxide rather than from the gate oxide of the micron-device.
关键词Total Dose Irradiation Static Random Access Memory Pattern Imprinting Deep Sub-micron
DOI10.1088/1674-1056/23/10/106102
收录类别SCI
WOS记录号WOS:000344057600057
引用统计
被引频次:5[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/3927
专题中国科学院特殊环境功能材料与器件重点试验室
通讯作者Yu, Xue-Feng
作者单位Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China; Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China;Univ Chinese Acad Sci, Beijing 100049, Peoples R China
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Zheng, Qi-Wen,Yu, Xue-Feng,Cui, Jiang-Wei,et al. Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation[J]. Chinese Physics B,2014,23(10).
APA Zheng, Qi-Wen.,Yu, Xue-Feng.,Cui, Jiang-Wei.,Guo, Qi.,Ren, Di-Yuan.,...&Zhou, Hang.(2014).Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation.Chinese Physics B,23(10).
MLA Zheng, Qi-Wen,et al."Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation".Chinese Physics B 23.10(2014).
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