3-D simulation of angled strike heavy-ion induced charge collection in silicon- germanium heterojunction bipolar transistors
Jinxin, Zhang; Hongxia, Guo; Lin, Wen; Qi, Guo; Jiangwei, Cui; Xin, Wang; Wei, Deng; Qiwen, Zhen; Xue, Fan; Yao, Xiao; Hongxia, G.
2014
Source PublicationJournal of Semiconductors
ISSN16744926
Volume35Issue:4Pages:60-65
Abstract

This paper presents 3-D simulation of angled strike heavy-ion induced charge collection in domestic silicon-germanium heterojunction bipolar transistors (SiGe HBTs). 3D damaged model of SiGe HBTs single-event effects (SEE) is built by TCAD simulation tools to research ions angled strike dependence. We select several different strike angles at variously typical ions strike positions. The charge collection mechanism for each terminal is identified based on analysis of the device structure and simulation results. Charge collection induced by angled strike ions presents a complex situation. Whether the location of device ions enters, as long as ions track through the sensitive volume, it will cause vast charge collection. The amount of charge collection of SiGe HBT is not only related to length of ions track in sensitive volume, but also influenced by STI and distance between ions track and electrodes. The simulation model is useful to research the practical applications of SiGe HBTs in space, and provides a theoretical basis for the further radiation hardening

Indexed ByEI
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/3925
Collection中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
Corresponding AuthorHongxia, G.
AffiliationKey Laboratory of Functional Materials and Devices for Special Environments of CAS,Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of SciencesUniversity of Chinese Academy of SciencesNorthwest Institution of Nuclear TechnologyState Key
Recommended Citation
GB/T 7714
Jinxin, Zhang,Hongxia, Guo,Lin, Wen,et al. 3-D simulation of angled strike heavy-ion induced charge collection in silicon- germanium heterojunction bipolar transistors[J]. Journal of Semiconductors,2014,35(4):60-65.
APA Jinxin, Zhang.,Hongxia, Guo.,Lin, Wen.,Qi, Guo.,Jiangwei, Cui.,...&Hongxia, G..(2014).3-D simulation of angled strike heavy-ion induced charge collection in silicon- germanium heterojunction bipolar transistors.Journal of Semiconductors,35(4),60-65.
MLA Jinxin, Zhang,et al."3-D simulation of angled strike heavy-ion induced charge collection in silicon- germanium heterojunction bipolar transistors".Journal of Semiconductors 35.4(2014):60-65.
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