This paper presents 3-D simulation of angled strike heavy-ion induced charge collection in domestic silicon-germanium heterojunction bipolar transistors (SiGe HBTs). 3D damaged model of SiGe HBTs single-event effects (SEE) is built by TCAD simulation tools to research ions angled strike dependence. We select several different strike angles at variously typical ions strike positions. The charge collection mechanism for each terminal is identified based on analysis of the device structure and simulation results. Charge collection induced by angled strike ions presents a complex situation. Whether the location of device ions enters, as long as ions track through the sensitive volume, it will cause vast charge collection. The amount of charge collection of SiGe HBT is not only related to length of ions track in sensitive volume, but also influenced by STI and distance between ions track and electrodes. The simulation model is useful to research the practical applications of SiGe HBTs in space, and provides a theoretical basis for the further radiation hardening
Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Northwest Institution of Nuclear Technology, Xi' an 710024, China;University of Chinese Academy of Sciences, Beijing 100049, China;State Key Laboratory of Electronic Thin Films and Integrated Device, University of Electronic Science and Technology of China, Chengdu 610054, China
Recommended Citation:
Jinxin, Zhang,Hongxia, Guo,Lin, Wen,et al. 3-D simulation of angled strike heavy-ion induced charge collection in silicon- germanium heterojunction bipolar transistors[J]. Journal of Semiconductors,2014-01-01,35(4).
