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Total dose effects on the matching properties of deep submicron MOS transistors
Wang, Yuxin; Hu, Rongbin; Li, Ruzhang; Chen, Guangbing; Fu, Dongbing; Lu, Wu
2014
发表期刊Journal of Semiconductors
ISSN16744926
卷号35期号:6
摘要Based on 0.18 μm MOS transistors, for the first time, the total dose effects on the matching properties of deep submicron MOS transistors are studied. The experimental results show that the total dose radiation magnifies the mismatch among identically designed MOS transistors. In our experiments, as the radiation total dose rises to 200 krad, the threshold voltage and drain current mismatch percentages of NMOS transistors increase from 0.55% and 1.4% before radiation to 17.4% and 13.5% after radiation, respectively. PMOS transistors seem to be resistant to radiation damage. For all the range of radiation total dose, the threshold voltage and drain current mismatch percentages of PMOS transistors keep under 0.5% and 2.72%, respectively.
DOI10.1088/1674-4926/35/6/064007
收录类别EI
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文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/3922
专题材料物理与化学研究室
作者单位Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China;No. 24 Research Institute, China Electronics Technology Group Corporation, Chongqing 400060, China;Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
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Wang, Yuxin,Hu, Rongbin,Li, Ruzhang,et al. Total dose effects on the matching properties of deep submicron MOS transistors[J]. Journal of Semiconductors,2014,35(6).
APA Wang, Yuxin,Hu, Rongbin,Li, Ruzhang,Chen, Guangbing,Fu, Dongbing,&Lu, Wu.(2014).Total dose effects on the matching properties of deep submicron MOS transistors.Journal of Semiconductors,35(6).
MLA Wang, Yuxin,et al."Total dose effects on the matching properties of deep submicron MOS transistors".Journal of Semiconductors 35.6(2014).
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