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题名: Total dose effects on the matching properties of deep submicron MOS transistors
作者: Wang, Yuxin; Hu, Rongbin; Li, Ruzhang; Chen, Guangbing; Fu, Dongbing; Lu, Wu
刊名: Journal of Semiconductors
发表日期: 2014
DOI: 10.1088/1674-4926/35/6/064007
卷: 35, 期:6
收录类别: EI
摘要: Based on 0.18 μm MOS transistors, for the first time, the total dose effects on the matching properties of deep submicron MOS transistors are studied. The experimental results show that the total dose radiation magnifies the mismatch among identically designed MOS transistors. In our experiments, as the radiation total dose rises to 200 krad, the threshold voltage and drain current mismatch percentages of NMOS transistors increase from 0.55% and 1.4% before radiation to 17.4% and 13.5% after radiation, respectively. PMOS transistors seem to be resistant to radiation damage. For all the range of radiation total dose, the threshold voltage and drain current mismatch percentages of PMOS transistors keep under 0.5% and 2.72%, respectively.
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内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/3922
Appears in Collections:材料物理与化学研究室_期刊论文

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作者单位: Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China;No. 24 Research Institute, China Electronics Technology Group Corporation, Chongqing 400060, China;Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China

Recommended Citation:
Wang, Yuxin,Hu, Rongbin,Li, Ruzhang,et al. Total dose effects on the matching properties of deep submicron MOS transistors[J]. Journal of Semiconductors,2014,35(6).
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