We investigate how γ exposure impacts the hot-carrier degradation in deep submicron NMOSFET with different technologies and device geometries for the first time. The results show that hot-carrier degradations on irradiated devices are greater than those without irradiation, especially for narrow channel device. The reason is attributed to charge traps in STI, which then induce different electric field and impact ionization rates during hot-carrier stress.
Key Laboratory of Functional Materials and Devices under Special Environments, Chinese Academy of Sciences, Xinjiang Technical Institute of Physics and Chemistry, Urumuqi 830011, China;University of Chinese Academy of Sciences, Beijing 100049, China
Cui, Jiangwei,Zheng, Qiwen,Yu, Xuefeng,et al. Hot-carrier effects on irradiated deep submicron NMOSFET[J]. Journal of Semiconductors,2014,35(7).