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题名: Hot-carrier effects on irradiated deep submicron NMOSFET
作者: Cui, Jiangwei; Zheng, Qiwen; Yu, Xuefeng; Cong, Zhongchao; Zhou, Hang; Guo, Qi; Wen, Lin; Wei, Ying; Ren, Diyuan
刊名: Journal of Semiconductors
发表日期: 2014
卷: 35, 期:7
收录类别: EI
摘要: We investigate how γ exposure impacts the hot-carrier degradation in deep submicron NMOSFET with different technologies and device geometries for the first time. The results show that hot-carrier degradations on irradiated devices are greater than those without irradiation, especially for narrow channel device. The reason is attributed to charge traps in STI, which then induce different electric field and impact ionization rates during hot-carrier stress.
内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/3920
Appears in Collections:中国科学院特殊环境功能材料与器件重点试验室_期刊论文

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作者单位: Key Laboratory of Functional Materials and Devices under Special Environments, Chinese Academy of Sciences, Xinjiang Technical Institute of Physics and Chemistry, Urumuqi 830011, China;University of Chinese Academy of Sciences, Beijing 100049, China

Recommended Citation:
Cui, Jiangwei,Zheng, Qiwen,Yu, Xuefeng,et al. Hot-carrier effects on irradiated deep submicron NMOSFET[J]. Journal of Semiconductors,2014,35(7).
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文件名: Hot-carrier effects on irradiated deep submicron NMOSFET.pdf
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