Hot-carrier effects on irradiated deep submicron NMOSFET
Cui, Jiangwei; Zheng, Qiwen; Yu, Xuefeng; Cong, Zhongchao; Zhou, Hang; Guo, Qi; Wen, Lin; Wei, Ying; Ren, Diyuan
2014
发表期刊Journal of Semiconductors
ISSN16744926
卷号35期号:7
摘要We investigate how γ exposure impacts the hot-carrier degradation in deep submicron NMOSFET with different technologies and device geometries for the first time. The results show that hot-carrier degradations on irradiated devices are greater than those without irradiation, especially for narrow channel device. The reason is attributed to charge traps in STI, which then induce different electric field and impact ionization rates during hot-carrier stress.
收录类别EI
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/3920
专题中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
作者单位Key Laboratory of Functional Materials and Devices under Special Environments, Chinese Academy of Sciences, Xinjiang Technical Institute of Physics and Chemistry, Urumuqi 830011, China;University of Chinese Academy of Sciences, Beijing 100049, China
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GB/T 7714
Cui, Jiangwei,Zheng, Qiwen,Yu, Xuefeng,et al. Hot-carrier effects on irradiated deep submicron NMOSFET[J]. Journal of Semiconductors,2014,35(7).
APA Cui, Jiangwei.,Zheng, Qiwen.,Yu, Xuefeng.,Cong, Zhongchao.,Zhou, Hang.,...&Ren, Diyuan.(2014).Hot-carrier effects on irradiated deep submicron NMOSFET.Journal of Semiconductors,35(7).
MLA Cui, Jiangwei,et al."Hot-carrier effects on irradiated deep submicron NMOSFET".Journal of Semiconductors 35.7(2014).
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