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题名: Orientation-dependent phase transition and dielectric properties of Ba <inf>0.85</inf>Ca<inf>0.15</inf>Ti<inf>0.9</inf>Zr<inf>0.1</inf>O<inf>3</inf> thin films
作者: Yang, Shihua (1) ; Xu, Jinbao (1) ; Gao, Bo (1) ; Wang, Lei (1) ; Chen, Jing (1) ; Chen, Xueying (1)
通讯作者: Xu, J.(xujb@ms.xjb.ac.cn)
刊名: Journal of Materials Science: Materials in Electronics
发表日期: 2013
卷: 24, 期:2, 页:658-661
收录类别: SCI ; EI
部门归属: (1) Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China ; (2) Graduate University of Chinese Academy of Sciences, Beijing 100049, China
摘要: Polycrystalline Ba0.85Ca0.15Ti0.9Zr 0.1O3 (BCZT) thin films with (100) preferential and random orientation are prepared on the LaNiO3 electrodes coated on Si substrates by chemical solution deposition process. The results show that the two types of films stabilize in the pure perovskite structure. The ferro-paraelectric phase transitions of two types of films occur at the temperature ranges of 280.2-297.8 K and 278.4-287.6 K, respectively. The dielectric constant, relaxation time and tunability of the random orientation film are smaller than those of the (100) preferential film but both almost have the similar leakage current characteristics. The mechanism associated with the change of the electrical properties of the thin films is also discussed. © 2012 Springer Science+Business Media, LLC.
英文摘要: Polycrystalline Ba0.85Ca0.15Ti0.9Zr 0.1O3 (BCZT) thin films with (100) preferential and random orientation are prepared on the LaNiO3 electrodes coated on Si substrates by chemical solution deposition process. The results show that the two types of films stabilize in the pure perovskite structure. The ferro-paraelectric phase transitions of two types of films occur at the temperature ranges of 280.2-297.8 K and 278.4-287.6 K, respectively. The dielectric constant, relaxation time and tunability of the random orientation film are smaller than those of the (100) preferential film but both almost have the similar leakage current characteristics. The mechanism associated with the change of the electrical properties of the thin films is also discussed. © 2012 Springer Science+Business Media, LLC.
语种: 英语
内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/3902
Appears in Collections:中国科学院新疆理化技术研究所(2002年以前数据)_期刊论文

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Yang, Shihua (1); Xu, Jinbao (1); Gao, Bo (1); Wang, Lei (1); Chen, Jing (1); Chen, Xueying (1).Orientation-dependent phase transition and dielectric properties of Ba 0.85Ca0.15Ti0.9Zr0.1O3 thin films,Journal of Materials Science: Materials in Electronics,2013,24(2):658-661
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