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题名: Effects of Sr-doping on the electrical properties of MnCoNiO<inf>4</inf> NTC ceramics
作者: Wang, Junhua (1) ; Yao, Jincheng (1) ; Chen, Zhaoyang (1) ; Fan, Yanwei (1) ; Chang, Aimin (1) ; Jia, Dianzeng (4)
通讯作者: Chen, Z.(czy@ms.xjb.ac.cn)
刊名: Journal of Materials Science: Materials in Electronics
发表日期: 2013
卷: 24, 期:2, 页:622-627
收录类别: SCI ; EI
部门归属: (1) Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China ; (2) Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China ; (3) Graduate School of the Chinese Academy of Sciences, Beijing 100049, China ; (4) Institute of Applied Chemistry, Xinjiang University, Urumqi 830046, China
摘要: The effects of Sr-doping on Ni-Mn-Co-O spinel-structured NTC ceramics were investigated. And the precursors of Sr-doped NiCoMnO4 NTC ceramics were attained by solid state reactions at room temperature, with no intermediate compounds. Its formation and the structural evolutions were characterized by thermo-gravimetry-differential scanning calorimetry, X-ray diffraction and scanning electron microscopy with energy dispersive spectroscopy. Related electrical analyses were also performed. The values of R298K, B 298/323 constant and the temperature coefficient of resistance α298K of the thermistors are in the range of 168-1,738 Ω, 3,257-3,359 K and -3.64 to -3.78 % K-1, respectively. Complex impedance analysis shows, for x = 0.2, single semicircular arc whose shape does not have any change with temperature. The grain boundary properties exhibit thermistor parameters with a negative temperature coefficient characteristic. The conduction for the grain boundary could be explained by oxygen vacancies. The results show that the ceramics exhibits a good electrical property because of narrow grain size distribution, controlled morphology, and high purity. This suggests that the electrical properties can be adjusted to desired values by controlling the Sr cation content. This series of materials could be considered as practical materials for NTC thermistor. Most importantly, this new approach greatly simplifies the preparation processes. © 2012 Springer Science+Business Media, LLC.
英文摘要: The effects of Sr-doping on Ni-Mn-Co-O spinel-structured NTC ceramics were investigated. And the precursors of Sr-doped NiCoMnO4 NTC ceramics were attained by solid state reactions at room temperature, with no intermediate compounds. Its formation and the structural evolutions were characterized by thermo-gravimetry-differential scanning calorimetry, X-ray diffraction and scanning electron microscopy with energy dispersive spectroscopy. Related electrical analyses were also performed. The values of R298K, B 298/323 constant and the temperature coefficient of resistance α298K of the thermistors are in the range of 168-1,738 Ω, 3,257-3,359 K and -3.64 to -3.78 % K-1, respectively. Complex impedance analysis shows, for x = 0.2, single semicircular arc whose shape does not have any change with temperature. The grain boundary properties exhibit thermistor parameters with a negative temperature coefficient characteristic. The conduction for the grain boundary could be explained by oxygen vacancies. The results show that the ceramics exhibits a good electrical property because of narrow grain size distribution, controlled morphology, and high purity. This suggests that the electrical properties can be adjusted to desired values by controlling the Sr cation content. This series of materials could be considered as practical materials for NTC thermistor. Most importantly, this new approach greatly simplifies the preparation processes. © 2012 Springer Science+Business Media, LLC.
语种: 英语
内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/3901
Appears in Collections:中国科学院新疆理化技术研究所(2002年以前数据)_期刊论文

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Recommended Citation:
Wang, Junhua (1); Yao, Jincheng (1); Chen, Zhaoyang (1); Fan, Yanwei (1); Chang, Aimin (1); Jia, Dianzeng (4).Effects of Sr-doping on the electrical properties of MnCoNiO4 NTC ceramics,Journal of Materials Science: Materials in Electronics,2013,24(2):622-627
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