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题名: Total ionizing dose effect on 0.18 μm narrow-channel NMOS transistors
作者: Wu, Xue (1) ; Lu, Wu (1) ; Wang, Xin (1) ; Xi, Shan-Bin (1) ; Guo, Qi (1) ; Li, Yu-Dong (1)
通讯作者: Lu, W.(luwu@ms.xjb.ac.cn)
关键词: 0.18 mu m ; narrow-channel NMOS transistor ; 60Co gamma ; RINCE
刊名: Wuli Xuebao/Acta Physica Sinica
发表日期: 2013
卷: 62, 期:13
收录类别: SCI ; EI
部门归属: (1) Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China ; (2) Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China ; (3) University of Chinese Academy of Sciences, Beijing 100049, China
摘要: This paper describes the total ionizing dose effect on 0.18 μm narrow-channel NMOS transistors which are exposed to a γ-ray radiation. Electrical parameters such as threshold voltage, leakage current, trans-conductance, drain-source conductance, and subthreshold slope extracted from the I-V curves are analyzed pre-and post-irradiation. Results show that the threshold voltage, the trans-conductance, and the drain-source conductance are sensitive to radiation compared to wide-channel NMOS transistors-the effect we call radiation induced narrow channel effect (RINCE). The amount of oxide-trapped charges and interface states which would degrade the threshold voltage and leakage current is induced in the STI oxide. The gate oxide is insensitive to irradiation. Combining the structure and process of devices, we finally discuss and analyze the above phenomenon in detail. © 2013 Chinese Physical Society.
英文摘要: This paper describes the total ionizing dose effect on 0.18 μm narrow-channel NMOS transistors which are exposed to a γ-ray radiation. Electrical parameters such as threshold voltage, leakage current, trans-conductance, drain-source conductance, and subthreshold slope extracted from the I-V curves are analyzed pre-and post-irradiation. Results show that the threshold voltage, the trans-conductance, and the drain-source conductance are sensitive to radiation compared to wide-channel NMOS transistors-the effect we call radiation induced narrow channel effect (RINCE). The amount of oxide-trapped charges and interface states which would degrade the threshold voltage and leakage current is induced in the STI oxide. The gate oxide is insensitive to irradiation. Combining the structure and process of devices, we finally discuss and analyze the above phenomenon in detail. © 2013 Chinese Physical Society.
语种: 中文
内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/3883
Appears in Collections:中国科学院新疆理化技术研究所(2002年以前数据)_期刊论文

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Recommended Citation:
Wu, Xue (1); Lu, Wu (1); Wang, Xin (1); Xi, Shan-Bin (1); Guo, Qi (1); Li, Yu-Dong (1).Total ionizing dose effect on 0.18 μm narrow-channel NMOS transistors,Wuli Xuebao/Acta Physica Sinica,2013,62(13):
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