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The total dose effects on the 1/f noise of deep submicron CMOS transistors
Hu, Rongbin; Wang, Yuxin; Lu, Wu
2014
Source PublicationJournal of Semiconductors
ISSN16744926
Volume35Issue:2Pages:7015-7021
Abstract

 Using 0.18 μm CMOS transistors, the total dose effects on the 1/f noise of deep-submicron CMOS transistors are studied for the first time in mainland China. From the experimental results and the theoretic analysis, we realize that total dose radiation causes a lot of trapped positive charges in STI (shallow trench isolation) SiO2 layers, which induces a current leakage passage, increasing the 1/f noise power of CMOS transistors. In addition, we design some radiation-hardness structures on the CMOS transistors and the experimental results show that, until the total dose achieves 750 krad, the 1/f noise power of the radiation-hardness CMOS transistors remains unchanged, which proves our conclusion.

DOI10.1088/1674-4926/35/2/024006
Indexed ByEI
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Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/3870
Collection材料物理与化学研究室
AffiliationScience and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China;Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
Recommended Citation
GB/T 7714
Hu, Rongbin,Wang, Yuxin,Lu, Wu. The total dose effects on the 1/f noise of deep submicron CMOS transistors[J]. Journal of Semiconductors,2014,35(2):7015-7021.
APA Hu, Rongbin,Wang, Yuxin,&Lu, Wu.(2014).The total dose effects on the 1/f noise of deep submicron CMOS transistors.Journal of Semiconductors,35(2),7015-7021.
MLA Hu, Rongbin,et al."The total dose effects on the 1/f noise of deep submicron CMOS transistors".Journal of Semiconductors 35.2(2014):7015-7021.
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