中国科学院新疆理化技术研究所机构知识库
Advanced  
XJIPC OpenIR  > 材料物理与化学研究室  > 期刊论文
题名: The total dose effects on the 1/f noise of deep submicron CMOS transistors
作者: Hu, Rongbin; Wang, Yuxin; Lu, Wu
通讯作者: .com)
刊名: Journal of Semiconductors
发表日期: 2014
DOI: 10.1088/1674-4926/35/2/024006
卷: 35, 期:2
收录类别: EI
摘要:  Using 0.18 μm CMOS transistors, the total dose effects on the 1/f noise of deep-submicron CMOS transistors are studied for the first time in mainland China. From the experimental results and the theoretic analysis, we realize that total dose radiation causes a lot of trapped positive charges in STI (shallow trench isolation) SiO2 layers, which induces a current leakage passage, increasing the 1/f noise power of CMOS transistors. In addition, we design some radiation-hardness structures on the CMOS transistors and the experimental results show that, until the total dose achieves 750 krad, the 1/f noise power of the radiation-hardness CMOS transistors remains unchanged, which proves our conclusion.
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/3870
Appears in Collections:材料物理与化学研究室_期刊论文

Files in This Item:
File Name/ File Size Content Type Version Access License
The total dose effects on the 1f noise of deep submicron CMOS transistors.pdf(951KB)期刊论文作者接受稿开放获取View 联系获取全文

作者单位: Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China;Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China

Recommended Citation:
Hu, Rongbin,Wang, Yuxin,Lu, Wu. The total dose effects on the 1/f noise of deep submicron CMOS transistors[J]. Journal of Semiconductors,2014,35(2).
Service
Recommend this item
Sava as my favorate item
Show this item's statistics
Export Endnote File
Google Scholar
Similar articles in Google Scholar
[Hu, Rongbin]'s Articles
[Wang, Yuxin]'s Articles
[Lu, Wu]'s Articles
CSDL cross search
Similar articles in CSDL Cross Search
[Hu, Rongbin]‘s Articles
[Wang, Yuxin]‘s Articles
[Lu, Wu]‘s Articles
Related Copyright Policies
Null
Social Bookmarking
Add to CiteULike Add to Connotea Add to Del.icio.us Add to Digg Add to Reddit
文件名: The total dose effects on the 1f noise of deep submicron CMOS transistors.pdf
格式: Adobe PDF
此文件暂不支持浏览
所有评论 (0)
暂无评论
 
评注功能仅针对注册用户开放,请您登录
您对该条目有什么异议,请填写以下表单,管理员会尽快联系您。
内 容:
Email:  *
单位:
验证码:   刷新
您在IR的使用过程中有什么好的想法或者建议可以反馈给我们。
标 题:
 *
内 容:
Email:  *
验证码:   刷新

Items in IR are protected by copyright, with all rights reserved, unless otherwise indicated.

 

 

Valid XHTML 1.0!
Powered by CSpace