Influence of channel length and layout on TID for 0.18 mu m NMOS transistors
Wu Xue; Lu Wu; Wang Xin; Guo Qi; He Chengfa; Li Yudong; Xi Shanbin; Sun Jing; Wen Lin; Lu, W
2013
发表期刊NUCLEAR SCIENCE AND TECHNIQUES
ISSN1001-8042
卷号24期号:6
摘要Different channel lengths and layouts on 0.18 mu n NMOS transistors are designed for investigating the dependence of short channel effects (SCEs) on the width of shallow trench isolation (STI) devices and designing in radiation hardness. Results show that, prior to irradiation, the devices exhibited near-ideal I-V characteristics, with no significant SCEs. Following irradiation, no noticeable shift of threshold voltage is observed, radiation-induced edge-leakage current, however, exhibits significant sensitivity on TID. Moreover, radiation-enhanced drain induced barrier lowering (DIBL) and channel length modulation (CLM) effects are observed on short-channel NMOS transistors. Comparing to stripe-gate layout, enclosed gate layout has excellent radiation tolerance.
关键词Sces Dibl Clm Enclosed-layout
收录类别SCI
WOS记录号WOS:000333230600004
引用统计
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/3848
专题中国科学院特殊环境功能材料与器件重点试验室
通讯作者Lu, W
作者单位Chinese Acad Sci, Key Lab Funct Mat & Devices Special Environm, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
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Wu Xue,Lu Wu,Wang Xin,et al. Influence of channel length and layout on TID for 0.18 mu m NMOS transistors[J]. NUCLEAR SCIENCE AND TECHNIQUES,2013,24(6).
APA Wu Xue.,Lu Wu.,Wang Xin.,Guo Qi.,He Chengfa.,...&Lu, W.(2013).Influence of channel length and layout on TID for 0.18 mu m NMOS transistors.NUCLEAR SCIENCE AND TECHNIQUES,24(6).
MLA Wu Xue,et al."Influence of channel length and layout on TID for 0.18 mu m NMOS transistors".NUCLEAR SCIENCE AND TECHNIQUES 24.6(2013).
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