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题名: Simple metal/SiO2/Si planar photodetector utilizing leakage current flows through a SiO2 layer
作者: Zu, Baiyi; Lu, Bin; Guo, Yanan; Xu, Tao; Dou, Xincun
通讯作者: Dou, XC
刊名: Journal of Materials Chemistry C
发表日期: 2014
DOI: 10.1039/c3tc32242d
卷: 2, 期:11, 页:2045-2050
收录类别: SCI
摘要: Silicon wafers covered with a thermally grown high-quality SiO2 layer were often used as the substrate to house different nanostructures to fabricate photodetection devices. No reports have ever challenged directly fabricating photodetectors utilizing leakage current through non-high-quality SiO2 films and the intrinsic light absorption properties of Si. Herein, we show that metal/SiO2/Si planar photodetectors could be easily fabricated by simply depositing two metal electrodes (such as, Au, Ag and Al) on top of SiO2/Si wafer in which the SiO2 layer is of non-high quality. The responsivity, stability, photoresponse characteristics and light intensity sensitivity are systematically evaluated. Our results clearly show that the present conveniently and cost-effectively fabricated metal/SiO2/Si planar photodetectors are of great advantage as compared to many of the nanostructure-based photodetectors constructed on SiO2/Si substrate. © The Royal Society of Chemistry.
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内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/3835
Appears in Collections:环境科学与技术研究室_期刊论文

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作者单位: Chinese Acad Sci, Key Lab Funct Mat & Devices Special Environm, Xinjiang Tech Inst Phys & Chem, Lab Environm Sci & Technol, Urumqi 830011, Peoples R China;No Illinois Univ, Dept Chem & Biochem, De Kalb, IL 60115 USA

Recommended Citation:
Zu, Baiyi,Lu, Bin,Guo, Yanan,et al. Simple metal/SiO2/Si planar photodetector utilizing leakage current flows through a SiO2 layer[J]. Journal of Materials Chemistry C,2014,2(11):2045-2050.
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