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Simple metal/SiO2/Si planar photodetector utilizing leakage current flows through a SiO2 layer
Zu, Baiyi; Lu, Bin; Guo, Yanan; Xu, Tao; Dou, Xincun
2014
发表期刊Journal of Materials Chemistry C
ISSN2050-7526
卷号2期号:11页码:2045-2050
摘要

Silicon wafers covered with a thermally grown high-quality SiO2 layer were often used as the substrate to house different nanostructures to fabricate photodetection devices. No reports have ever challenged directly fabricating photodetectors utilizing leakage current through non-high-quality SiO2 films and the intrinsic light absorption properties of Si. Herein, we show that metal/SiO2/Si planar photodetectors could be easily fabricated by simply depositing two metal electrodes (such as, Au, Ag and Al) on top of SiO2/Si wafer in which the SiO2 layer is of non-high quality. The responsivity, stability, photoresponse characteristics and light intensity sensitivity are systematically evaluated. Our results clearly show that the present conveniently and cost-effectively fabricated metal/SiO2/Si planar photodetectors are of great advantage as compared to many of the nanostructure-based photodetectors constructed on SiO2/Si substrate. © The Royal Society of Chemistry.

DOI10.1039/c3tc32242d
收录类别SCI
WOS记录号WOS:000332028200015
引用统计
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/3835
专题环境科学与技术研究室
通讯作者Dou, Xincun
作者单位Chinese Acad Sci, Key Lab Funct Mat & Devices Special Environm, Xinjiang Tech Inst Phys & Chem, Lab Environm Sci & Technol, Urumqi 830011, Peoples R China;No Illinois Univ, Dept Chem & Biochem, De Kalb, IL 60115 USA
推荐引用方式
GB/T 7714
Zu, Baiyi,Lu, Bin,Guo, Yanan,et al. Simple metal/SiO2/Si planar photodetector utilizing leakage current flows through a SiO2 layer[J]. Journal of Materials Chemistry C,2014,2(11):2045-2050.
APA Zu, Baiyi,Lu, Bin,Guo, Yanan,Xu, Tao,&Dou, Xincun.(2014).Simple metal/SiO2/Si planar photodetector utilizing leakage current flows through a SiO2 layer.Journal of Materials Chemistry C,2(11),2045-2050.
MLA Zu, Baiyi,et al."Simple metal/SiO2/Si planar photodetector utilizing leakage current flows through a SiO2 layer".Journal of Materials Chemistry C 2.11(2014):2045-2050.
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