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题名: Etching of new phase change material Ti0.5Sb2Te3 by Cl-2/Ar and CF4/Ar inductively coupled plasmas
作者: Zhang, Zhonghua; Song, Sannian; Song, Zhitang; Cheng, Yan; Zhu, Min; Li, Xiaoyun; Zhu, Yueqin; Guo, Xiaohui; Yin, Weijun; Wu, Liangcai; Liu, Bo; Feng, Songlin; Zhou, Dong
关键词: Phase change material ; Ti-Sb-Te ; Etching ; ICP
刊名: Applied Surface Science
发表日期: 2014
DOI: 10.1016/j.apsusc.2014.05.002
卷: 311, 期:8, 页:68-73
收录类别: SCI
摘要: The etching characteristics of new phase change material Ti 0.5Sb2Te3 (TST) were studied with the Cl 2/Ar or CF4/Ar gas mixture using inductively coupled plasmas system. The effects of gas-mixing ratio, bias power, gas pressure, applying ICP power on the variations of etch rate, etch profiles, and surface roughness were investigated, respectively. Furthermore, X-ray photoelectron spectroscopy (XPS) compositional depth profiling was used to determine the surface degradation of etched TST using Cl2/Ar and CF4/Ar gas mixture. The etched TST shows a shift of the peaks related to Sb and Te to a higher energy for both etching gas, indicating the surface degradation of TST after etching. TST etched by Cl2 shows a thicker chloride layer remaining on the etched surface than fluorinate layer etched by CF4 owing to the higher reactivity. In the case of CF4, a thinner C-F polymer layer was observed on the etched surface, indicating lower etch rate due to the difficulty in making F diffusion into the TST through the C-F layer.
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内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/3749
Appears in Collections:新疆维吾尔自治区电子信息材料与器件重点实验室_期刊论文

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作者单位: Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China;Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China

Recommended Citation:
Zhang, Zhonghua,Song, Sannian,Song, Zhitang,et al. Etching of new phase change material Ti0.5Sb2Te3 by Cl-2/Ar and CF4/Ar inductively coupled plasmas[J]. Applied Surface Science,2014,311(8):68-73.
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文件名: Etching of new phase change material Ti0.5Sb2Te3 by Cl-2Ar and CF4Ar inductively coupled plasmas.pdf
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