A radiation effect test system for Charge Coupled Device (CCD) and Complementary Metal Oxide Semiconductor Transistor Active Pixel Sensor (CMOS APS) image sensors was developed to further study the space radiation effects of these devices and to accurately evaluate their space radiation adaptability. The system is an integrated optic-mechanical-electric equipment, and contains three subsystems for testing photoelectric responses, spectrum response and processing output data. It is able to comprehensively and quantitatively test and analyze the photoelectric response and spectral characteristics of the devices. The system shows its spectrum range and spectrum resolution to be 0.38 to 1.1 μm and 1 nm, respectively. The system has been combined with the irradiation facilities in Xinjiang Technical Institute of Physics & Chemistry to constitute a platform for radiation effect simulation experiments and anti-radiation performance evaluation of photo-electronic imaging devices. Currently, the system has provided a strong support for the research & development of domestic anti-radiation CCD and CMOS APS devices, including type-selection, examination and evaluation of imaging devices of space sectors. The results show that this system can satisfy the requirements of radiation effect research on CCD and CMOS devices.