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Structural evolution and electric properties of low content Zr-doped BiFeO3 thin films
LiJin; WangLei; BianLiang; ZhaoPeng Jun; XuJin Bao
2013
Conference Name3rd International Conference on Chemical Engineering and Advanced Materials, CEAM 2013
Pages817-820
Conference DateJuly 6, 2013 - July 7, 2013
Conference PlaceGuangzhou, PEOPLES R CHINA
Publication PlaceTrans Tech Publications Ltd, Kreuzstrasse 10, Zurich-Durnten, CH-8635, Switzerland
Abstract

The pure and Zr-doped BiFeO3 thin films were fabricated on Pt/TiO2/SiO2/Si substrates by sol-gel method. The microstructural characterization revealed a phase structural transition from rhombohedral structure to tetragonal structure in Zr-doped BiFeO3 thin films. Compared with pureBiFeO(3) thin film, the Zr-doped BiFeO3 thin films showed better dielectric and leakage current characteristics. The mechanism associated with the enhancement of the electrical properties of the thin films is also discussed.

Indexed ByEI
Document Type会议论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/3650
Collection材料物理与化学研究室
AffiliationChinese Acad Sci, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Xinjiang, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Devices, Xinjiang 830011, Peoples R China;Univ Chinese Acad Sci, Beijing 100049, Peoples R China
Recommended Citation
GB/T 7714
LiJin,WangLei,BianLiang,et al. Structural evolution and electric properties of low content Zr-doped BiFeO3 thin films[C]. Trans Tech Publications Ltd, Kreuzstrasse 10, Zurich-Durnten, CH-8635, Switzerland,2013:817-820.
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