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Reactive sputtering deposition of Gd-doped AlN thin film
Wu, Rong; Pan, Dong; Jian, Jikang; Li, Jin
2012
Conference Name2012 2nd International Conference on Advanced Materials and Information Technology Processing, AMITP 2012
Pages221-224
Conference DateOctober 17, 2012 - October 18, 2012
Conference PlaceTaipei, TAIWAN
Publication PlaceTrans Tech Publications, P.O. Box 1254, Clausthal-Zellerfeld, D-38670, Germany
Abstract

Gd-doped AlN film was deposited on Si (222) substrate by Radio frequency reactive sputtering. XRD patterns show that the Gd-doped film maintains the hexagonal wurtzite structure with the (002) preferred c-axis orientation. The deposition film possesses similar smooth surface and homogenous grain size. A broad emission band centered at 444nm is observed and the band could be ascribed to the defects. The results show that Gd is a potential dopant for preparing magneto-electrical devices operating at room temperature. © (2012) Trans Tech Publications, Switzerland.

KeywordAin Doping Gd Rf Reactive Sputtering
Indexed ByEI
Document Type会议论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/3648
Collection环境科学与技术研究室
AffiliationXinJiang Univ, Dept Phys Sci & Technol, Urumqi 830046, Peoples R China;Chinese Acad Sci, Xinjiant Tech Inst Phys & Chem, Xinjiang Key Lab Elect Informat Mat Devices, Urumqi, Peoples R China;Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstructures, Beijing, Peoples R China;Cent S Univ, State Key Lab Power Met, Changsha, Peoples R China
Recommended Citation
GB/T 7714
Wu, Rong,Pan, Dong,Jian, Jikang,et al. Reactive sputtering deposition of Gd-doped AlN thin film[C]. Trans Tech Publications, P.O. Box 1254, Clausthal-Zellerfeld, D-38670, Germany,2012:221-224.
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