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题名: Reactive sputtering deposition of Gd-doped AlN thin film
作者: Wu, Rong (1) ; Pan, Dong (1) ; Jian, Jikang (2) ; Li, Jin (1)
会议名称: 2012 2nd International Conference on Advanced Materials and Information Technology Processing, AMITP 2012
会议日期: October 17, 2012 - October 18, 2012
出版日期: 2012
会议地点: Taipei, Taiwan
通讯作者: Wu, R.(wurongxju@sian.com)
出版地: Trans Tech Publications, P.O. Box 1254, Clausthal-Zellerfeld, D-38670, Germany
收录类别: EI
ISSN: 10226680
ISBN: 9783037855232
部门归属: (1) Department of Physical Science and Technology, XinJiang University, Urumqi 830046], China ; (2) Xinjiang Key Laboratory of Electronic Information Materials and Devices, The Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China ; (3) State Key Laboratory for superlattices and Microstructures, Institute of semiconductor, Chinese Academy of Sciences, P.O, Box 912, Beijing 100083, China ; (4) State Key Laboratory of Powder Metallurgy, Central South University, Changsha Hunan, 410083, China
摘要: Gd-doped AlN film was deposited on Si (222) substrate by Radio frequency reactive sputtering. XRD patterns show that the Gd-doped film maintains the hexagonal wurtzite structure with the (002) preferred c-axis orientation. The deposition film possesses similar smooth surface and homogenous grain size. A broad emission band centered at 444nm is observed and the band could be ascribed to the defects. The results show that Gd is a potential dopant for preparing magneto-electrical devices operating at room temperature. © (2012) Trans Tech Publications, Switzerland.
英文摘要: Gd-doped AlN film was deposited on Si (222) substrate by Radio frequency reactive sputtering. XRD patterns show that the Gd-doped film maintains the hexagonal wurtzite structure with the (002) preferred c-axis orientation. The deposition film possesses similar smooth surface and homogenous grain size. A broad emission band centered at 444nm is observed and the band could be ascribed to the defects. The results show that Gd is a potential dopant for preparing magneto-electrical devices operating at room temperature. © (2012) Trans Tech Publications, Switzerland.
语种: 英语
内容类型: 会议论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/3648
Appears in Collections:环境科学与技术研究室_会议论文

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Recommended Citation:
Wu, Rong (1); Pan, Dong (1); Jian, Jikang (2); Li, Jin (1).Reactive sputtering deposition of Gd-doped AlN thin film.见:.,Trans Tech Publications, P.O. Box 1254, Clausthal-Zellerfeld, D-38670, Germany,2012,221-224
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