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XJIPC OpenIR  > 新疆维吾尔自治区电子信息材料与器件重点实验室  > 会议论文
题名: Fluorine doping effects on the electric property of BiFeO<inf>3</inf> thin films
作者: XuFang Long ; ZhaoPeng Jun ; ZhangJia Qi ; XiongXin Qian
会议名称: 2014 International Conference on Mechatronics, Materials and Manufacturing, ICMMM 2014
会议日期: August 2, 2014 - August 4, 2014
出版日期: 2014
会议地点: Chengdu, China
出版地: Trans Tech Publications Ltd
收录类别: EI
ISSN: 16609336
ISBN: 9783038352259
部门归属: (1) Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics and Chemistry of CAS, 40-1 South Beijing Road, Urumqi, China
摘要: F doping BiFeO3-xFx (x=0, 0.02, 0.04, 0.06, 0.08) thin films were successfully fabricated on ITO/glass substrates by sol-gel method. X-ray diffraction analysis indicated that the un-doped BiFeO3 and F doping BiFeO3 thin films presented rhombohedral structure with the space group R3c. F-doping is found to significantly enhance the dielectric constant and decrease the leakage current density for x=0.08 compared with x=0. This study provides direct evidence that the multiferroic characteristics of BiFeO3 are sensitive to the anion doping, such as F, providing a convenient alternative to manipulate the electric polarization in multiferroic oxides.
语种: 英语
内容类型: 会议论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/3614
Appears in Collections:新疆维吾尔自治区电子信息材料与器件重点实验室_会议论文

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