Fluorine Doping Effects on the Electric Property of BiFeO3 Thin Films
XuFang Long; ZhaoPeng Jun; ZhangJia Qi; XiongXin Qian
2014
Conference Name2014 International Conference on Mechatronics, Materials and Manufacturing, ICMMM 2014
Pages161-164
Conference DateAugust 2, 2014 - August 4, 2014
Conference PlaceChengdu, PEOPLES R CHINA
Publication PlaceTrans Tech Publications Ltd
Abstract

F doping BiFeO3-xFx (x=0, 0.02, 0.04, 0.06, 0.08) thin films were successfully fabricated on ITO/glass substrates by sol-gel method. X-ray diffraction analysis indicated that the un-doped BiFeO3 and F doping BiFeO3 thin films presented rhombohedral structure with the space group R3c. F-doping is found to significantly enhance the dielectric constant and decrease the leakage current density for x=0.08 compared with x=0. This study provides direct evidence that the multiferroic characteristics of BiFeO3 are sensitive to the anion doping, such as F, providing a convenient alternative to manipulate the electric polarization in multiferroic oxides.

KeywordBifeo3 Thin Film f Doped Electric Property Sol-gel
Indexed ByEI
Document Type会议论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/3614
Collection新疆维吾尔自治区电子信息材料与器件重点实验室
AffiliationXinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics and Chemistry of CAS, 40-1 South Beijing Road, Urumqi, China
Recommended Citation
GB/T 7714
XuFang Long,ZhaoPeng Jun,ZhangJia Qi,et al. Fluorine Doping Effects on the Electric Property of BiFeO3 Thin Films[C]. Trans Tech Publications Ltd,2014:161-164.
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