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Preparation and energy-storage performance of PLZT antiferroelectric thick films via sol-gel method
LiuYunying; WangYing; HaoXihong; XuJinbao
2013
会议名称8th Asian Meeting on Electroceramics (AMEC)
页码S513-S516
会议日期JUL 01-05, 2012
会议地点MALAYSIA
摘要

In this work, sol gel-derived Pb0.97La0.02(Zr0.97Ti0.03)o(3)(PLZT 2/97/3) antiferroelectric (AFE) thick films were fabricated on LaNiO3-bottom electrodes through a two-step heat-treatment process. The effects of the heat-treatment process on the crystalline structure and the energy-storage performance of the AFE films were investigated in detail. While all the PLZT 2/97/3films crystallized into a pure perovskite phase, the film pyrolyzed at 600 degrees C shows a relatively more homogeneous surface morphology. As a result, the film pyrolyzed at 600 degrees C possesses the highest energy-storage efficiency of 64.4%. However, the film pyrolyzed at a lower temperature exhibits a larger energy storage density because of its large saturated polarization. The maximum energy storage density of 20.1 J/cm(3) was obtained at 1158 kV/cm for the films pyrolyzed at 550 degrees C.

关键词Sol-gel Processes Dielectric Properties Plzt Capacitors
收录类别SCI
文献类型会议论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/3596
专题材料物理与化学研究室
作者单位Inner Mongolia Univ Sci & Technol, Sch Chem & Chem Engn, Baotou 014010, Peoples R China;Inner Mongolia Univ Sci & Technol, Sch Mat & Met, Baotou 014010, Peoples R China;Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China
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LiuYunying,WangYing,HaoXihong,et al. Preparation and energy-storage performance of PLZT antiferroelectric thick films via sol-gel method[C],2013:S513-S516.
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