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题名: Preparation and energy-storage performance of PLZT antiferroelectric thick films via sol-gel method
作者: LiuYunying ; WangYing ; HaoXihong ; XuJinbao
会议名称: 8th Asian Meeting on Electroceramics (AMEC)
会议日期: JUL 01-05, 2012
出版日期: 2013
会议地点: MALAYSIA
关键词: Sol-gel processes ; Dielectric properties ; PLZT ; Capacitors
通讯作者: Hao, X.(xhhao@imust.cn)
出版地: Elsevier Ltd, Langford Lane, Kidlington, Oxford, OX5 1GB, United Kingdom
收录类别: SCI ; EI
ISSN: 2728842
部门归属: (1) School of Chemistry and Chemical Engineering, Inner Mongolia University of Science and Technology, Baotou 014010, China
摘要: In this work, sol-gel-derived Pb0.97La0.02(Zr 0.97Ti0.03)O3(PLZT 2/97/3) antiferroelectric (AFE) thick films were fabricated on LaNiO3-bottom electrodes through a two-step heat-treatment process. The effects of the heat-treatment process on the crystalline structure and the energy-storage performance of the AFE films were investigated in detail. While all the PLZT 2/97/3films crystallized into a pure perovskite phase, the film pyrolyzed at 600 °C shows a relatively more homogeneous surface morphology. As a result, the film pyrolyzed at 600 °C possesses the highest energy-storage efficiency of 64.4%. However, the film pyrolyzed at a lower temperature exhibits a larger energy storage density because of its large saturated polarization.The maximum energy storage density of 20.1 J/cm3was obtained at 1158 kV/cm for the films pyrolyzed at 550 °C.
语种: 英语
内容类型: 会议论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/3596
Appears in Collections:材料物理与化学研究室_会议论文

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