|高电位梯度 ZnO 压敏陶瓷的制备、性能及机理研究|
|Place of Conferral||北京|
|Keyword||Zno 压敏陶瓷 Li 掺杂 高电位梯度 晶界势垒高度 能带|
Lithium acceptor doped ZnO varistor ceramics with high voltage-gradient were prepared by solid phase synthesis method. The effect of Li+ doping content and sintering temperature on the electrical properties of ZnO varistor ceramics were studied. And the effect of Li+ dopant on the phase composition & microstructure of ZnO varistor ceramics were studied. And the effects of Li+ dopant on the energy band structure of ZnO varistor ceramics were studied. The reasons of high potential gradient were analyzed and the mechanism of ZnO varistor ceramics with high voltage-gradient was discussed preliminarily. Main conclusions are as follows: 1. At a certain sintering temperature, there is a proper lithium doping content range. In this range, we can obtain high voltage gradient zinc oxide-based varistors with quality comprehensive performance index. For instance, at 1125℃ sintering temperature the proper lithium doping content range is 0.05～0.20mol%( Li2CO3). And the breakdown voltage range, the nonlinear coefficient, the leakage current is respectively 850～1890V/mm, 18.7～20 and 10～12μA. 2. At a certain lithium doping content, there is a proper sintering temperature range. In this range, we can obtain high voltage gradient zinc oxide-based varistors with quality comprehensive performance index. For instance, at 0.02mol%( Li2CO3) lithium doping content proper sintering temperature range is 1050℃～1100℃. And the breakdown voltage range, the nonlinear coefficient, the leakage current is respectively 727～1255V/mm, 11.4～20.4and 2.6～45μA. 3. The phase composition of samples is zinc oxide phase, bismuth trioxide phase and spinel phase Co7Sb2O12. And there is no pyrochlore phase. 4. Substitute Li+ for Zn2+, which brings a bound hole and an additional acceptor level nearby the valence band maximum in the band gap, distorts the energy band. 5. Doping Li+ can hinder the bonding of adjoining ZnO grains. The significant decrease of the ZnO grain size and the increment of grain boundary barrier are the main reasons for raising the voltage gradient.
|王发顶. 高电位梯度 ZnO 压敏陶瓷的制备、性能及机理研究[D]. 北京. 中国科学院研究生院,2009.|
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