XJIPC OpenIR  > 材料物理与化学研究室
掺杂硅热敏材料的制备及其特性研究
董茂进
Subtype硕士
Thesis Advisor陈朝阳
2009-06
Degree Grantor中国科学院研究生院
Place of Conferral北京
Degree Discipline材料物理与化学
Keyword单晶硅 深能级杂质 热敏特性 Ntc 电学特性 片式
Abstract

本论文研究利用过渡族金属元素,通过高温扩散的方法,掺杂进入单晶硅中形
成深能级杂质,制备掺杂硅材料。研究发现掺杂硅材料具有热敏特性,并且在制备高B 低阻热敏材料方面具有自身的优势,成为氧化物陶瓷热敏材料的重要补充。并进一步讨论了原始电阻率、扩散源的种类、扩散温度、扩散时间等因素对掺杂硅热敏材料参数的影响。1. 不同种类的深能级杂质在硅中能级位置不同,扩散后得到材料的 B 值也不同,深能级束缚中心所在的能级位置和材料的B 值存在关联。2. 采用镍、金作为扩散源,硅片表面镍原子浓度恒定,金原子浓度增大,当金原子浓度为2×10-6mol/cm2 时,一致性达到最佳。初始电阻率为1Ω·cm 的n 型硅片,扩散温度从900℃升高到1175℃,材料的电阻率一直在增加;当扩散温度超过1175℃,电阻率反而变小,使用冷热探针法测试,发现硅片已经转型成为p型。初始电阻率为10Ω·cm 的n 型硅片,材料从n 型转为p 型的温度为1050℃。3. 以镍、金为扩散源,选取原始电阻率为 1Ω·cm 的n 型硅片,扩散温度应该在900-1000℃,扩散时间在2h。得到的镍、金掺杂硅材料的电阻率低于0.25kΩ·cm,而B 值保持在5000k 左右。4. 用镍、金掺杂的单晶硅材料制成0805、0603、0402 等规格的片式热敏电阻,讨论了在片式器件制备过程中电极的欧姆接触问题,通过硅敏感体-镍-银三层结构的处理,实现了器件电极的欧姆接触。

Other Abstract
The study emphasis of this thesis is single-crystal silicon doped by transition-mental, which formed deep level impurities. The doped silicon material has thermal-sensitive characteristic. By selecting appropriate deep level impurities, it is possible to make a kind of NTC silicon material which has high B-value and low electrical resistivity. The electrical parameters of the doped silicon are affected by the initial electricity of the silicon wafers, kinds of transition-mental, surface concentration of diffusion source, the diffusion temperature and time. 1.Transition-mental elements make different energy level in the silicon energy band and form the B-value which relation to the different energy level location. 2.Silicon surface concentration of nickel atoms is invariableness and silicon surface concentration of gold atoms is rising. When silicon surface concentration of gold atoms is 2×10-6mol/cm2, we get the best uniformity material. The initial electricity of silicon wafers is 1Ω•cm, diffusion temperature rising from 900℃ to 1175℃, the electrical resistivity and B-value keeps on increasing. When the diffusion temperature exceeded 1175℃, the electrical resistivity and B-value change smaller. Using hot and cold probes method to test this material, we can see that n-type silicon changes to p-type silicon when the diffusion temperature is above 1175℃. The initial electricity of silicon wafers is 10Ω•cm. when diffusion temperature is 1050℃, the n-type silicon has changed p-type silicon. 3.In the same B-value, such materials’ electrical resistivity is lower than the oxide ceramic thermal-sensitive material. We choose the lower initial electricity of silicon wafers, such as 1Ω•cm. If the diffusion temperature is between 900℃ and 1000℃, the electrical resistivity is under 0.25kΩ•cm and B-value is about 5000k 4.The silicon wafers doped nickel and gold were made into thermistors size at 0805、0603、0402. On the single crystal silicon wafers, metal nickel was deposited by the chemistry deposit method. After the electrode annealed, ohm contact emerge between Si-Ni-Ag structure, positive and negative of the electrode were unanimous.
Document Type学位论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/3568
Collection材料物理与化学研究室
Affiliation中国科学院新疆理化技术研究所
Recommended Citation
GB/T 7714
董茂进. 掺杂硅热敏材料的制备及其特性研究[D]. 北京. 中国科学院研究生院,2009.
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