|Place of Conferral||北京|
|Keyword||新型非易失存储器 传统非易失存储器 总剂量效应 辐射敏感参数|
Flash and SONOS widely used in the field of spaceflight because of programmable, nonvolatile, high rate, and good resistance to vibration, they are core devices for spaceflight electronic systems. The functional of nonvolatile memory would be failure by ionizing effect, displacement damage effect and single event effect. FRAM, MRAM and PCRAM are new nonvolatile memories. The performances of new nonvolatile memories are superior to traditional nonvolatile memories, and the anti-radiation ability of new nonvolatile memories also superior to traditional nonvolatile memories. The anti-radiation abilities of new nonvolatile memories need to be gotten in order to equip memories in spaceflight electronic systems. The knowledge of high performance data storage was accumulated after radiation effects and mechanism of new nonvolatile memories were studied. This article focused on the test technology of new nonvolatile memories radiation effect. The radiation mechanism, the roles of parameters degradation and functional failure mode are analyzed by putting the memories in different bias, different radiation sources, different dose rate. The difference of radiation mechanisms between traditional nonvolatile memory and new nonvolatile memory were studied, the difference of radiation mechanisms among new nonvolatile memories was discussed. The main research results can be listed as follows. (1) The radiation characterization technique of new nonvolatile memories was studied. Parameters of DC, AC and functional pattern were tested by using large-scale digital circuit testing system. The radiation characterization technique enlarge the search scope of radiation sensitive paratmeters, the radiation sensitive paratmeters which were not reported in literature were captured. The fault coverage of memory was improved, which could effectively prevent overestimate the ability of anti-radiation. (2) The ionizing radiation effect and mechanisms of Flash, SONOS, FRAM, MRAM and PCRAM were studied. The anti-radiation ability of new nonvolatile memories was better than that of traditional nonvolatile memories because of charge pump, therefore the radiation mechanism of charge pump was analyzed. (3) New nonvolatile memories had good radiation toleration. The cells of RRAM could function properly after TID of 200 kGy(Si) using 60Co γ source, retention and endurance characteristics had not significantly degrade even after a high-TID. The reason of functional failure was not the cell of memory but rather CMOS peripheral control circuit of memory was deteriorated according to experiment phenomena of FRAM, MRAM and PCRAM. (4) The relationship between trapped charges and radiation sensitive paratmeters was discussed, additional electric ?eld was introduced by oxide trapped charges, and leakage current was produced since the Schottky emission or space-charge-limited current occurred. Leakage current of MRAM was increased could be explained by oxide trapped charges affect the Frenkel-Poole effect. (5) The radiation effect of new nonvolatile memories under different radiation sources, different dose rate and bias were studied. The respond to radiation of FRAM under different bias were different because CMOS circuit were biased to different state. New nonvolatile memories accorded with time dependent effect under different dose rate.The cumulative dose of functional failure basically the same under different radiation sources, but the change of parameters were different slightly. The function of MRAM was failed in the same level dose to composite field and TID, but parameters manifested the radiation damage of composite field is less than that of TID because composite field produced less oxide trapped charges.
|张兴尧. 新型非易失存储器电离辐射效应及机理研究[D]. 北京. 中国科学院大学,2014.|
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