氧化物半导体热敏电阻器的制造方法
杨文,康健,张昭,王大为
1999-10-27
Rights Holder中国科学院新疆理化技术研究所
Date Available2013-11-27
Country中国
Subtype发明
Abstract本发明涉及一种氧化物半导体热敏电阻及其制造方法,其主要是以钴、锰、铁的硝酸盐或醋酸盐为原料,采用液相共沉淀法制备材料粉体,加入乳化剂OP进行清洗,然后将粉体进行分解、研磨、预烧后制成。该热敏电阻为环氧密封单端引线珠状,具有体积小,稳定性好,可靠性高等特点,
Application Date1996-12-14
Patent NumberZL96122177.1
Status授权后放弃
Application Number96122177.1
Document Type专利
Identifierhttp://ir.xjipc.cas.cn/handle/365002/3378
Collection中国科学院新疆理化技术研究所(2002年以前数据)
Recommended Citation
GB/T 7714
杨文,康健,张昭,王大为. 氧化物半导体热敏电阻器的制造方法. ZL96122177.1[P]. 1999-10-27.
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