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一种制备蒙脱石原位插层式纳米零价铁的制备方法
贾汉忠; 王传义; 李守柱; 范晓芸
2013-01-02
Rights Holder中国科学院新疆理化技术研究所
Date Available2013-11-27
Country中国
Subtype发明
Abstract本发明公开了一种高活性高稳定性蒙脱石负载(亚)纳米零价铁的制备方法,该方法使用蒙脱石为负载体,所制得的零价铁处于蒙脱石层间,且以纳米或亚纳米级原子簇尺度存在,此零价铁较其它类型的纳米零价铁具有更高的反应活性和还原有效性。以蒙脱石为零价铁制备的模板不但可以防止零价铁颗粒的团聚,增强其流动性,还可在很大程度上保护零价铁,免于被水分子氧化。这一制备方法解决了纳米零价铁在合成和应用过程中易团聚、易被水氧化和流动性差的问题。
Application Date2011-06-14
Patent NumberZL201110158838.X
Status授权
Application Number201110158838.X
Document Type专利
Identifierhttp://ir.xjipc.cas.cn/handle/365002/3320
Collection环境科学与技术研究室
Recommended Citation
GB/T 7714
贾汉忠,王传义,李守柱,等. 一种制备蒙脱石原位插层式纳米零价铁的制备方法. ZL201110158838.X[P]. 2013-01-02.
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