叠层片式负温度系数热敏电阻的制备方法
康雪雅,王海珍,韩英,孙广臣
Rights Holder中国科学院新疆理化技术研究所 ; 新疆中科传感有限责任公司
Date Available2013-11-27
Country中国
Subtype发明
Abstract本发明涉及一种叠层片式负温度系数热敏电阻及其制备方法,该热敏电阻以四氧化三锰、四氧化三钴、三氧化二镍、二氧化硅为原料,采用将原料粉体用机械球磨法合成负温度系数热敏精细粉体,再用流延工艺(薄带浇注)、烧结及涂敷金属电极技术即可得到叠层片式负温度系数热敏电阻,所得叠片片式负温度系数热敏电阻体积小,精度高,其材料常数B值为4030--4105,B值允许偏差:±1%,该叠层片式负温度系数热敏电阻的电阻值R25℃=32—208.5K
Application Date2011-04-28
Funding Project材料学科
Status实审
Application Number201110108401.5
Document Type专利
Identifierhttp://ir.xjipc.cas.cn/handle/365002/3314
Collection中国科学院新疆理化技术研究所(2002年以前数据)
Recommended Citation
GB/T 7714
康雪雅,王海珍,韩英,孙广臣. 叠层片式负温度系数热敏电阻的制备方法.
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