XJIPC OpenIR  > 材料物理与化学研究室
一种高电阻、低B值负温度系数热敏电阻器
张惠敏; 常爱民; 王伟,
2012-09-05
Rights Holder中国科学院新疆理化技术研究所
Date Available2013-11-27
Country中国
Subtype发明
Abstract本发明涉及一种高电阻、低B值负温度系数热敏电阻器,该电阻是由原料镧、铬、铝、硅的氧化物和原料锰、镍、铬、锆的氧化物分别进行研磨,煅烧,制得颗粒大小均匀,分散性好的单一相材料,再经双相混合,研磨,高温烧结,封装,即可得到高电阻、低B值负温度系数热敏电阻器,其参数为R0℃=12KΩ±2%,B值为2050K±3%。本发明具有制备工艺简单,操作方便和质量稳定的优点,可在较宽温区内进行测温、控温及线路补偿,与共沉淀法相比大大降低了元件的生产成本,同时节约能源、生产效率显著提高。
Application Date2009-12-28
Patent NumberZL200910113608.4
Status授权
Application Number200910113608.4
Document Type专利
Identifierhttp://ir.xjipc.cas.cn/handle/365002/3272
Collection材料物理与化学研究室
Recommended Citation
GB/T 7714
张惠敏,常爱民,王伟,. 一种高电阻、低B值负温度系数热敏电阻器. ZL200910113608.4[P]. 2012-09-05.
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