掺金、掺铂单晶硅互换热敏电阻及其制作方法
韦风辉,李国华,柳培立
1988-12-01
Rights Holder中国科学院新疆理化技术研究所
Date Available2013-11-27
Country中国
Subtype发明
Abstract本发明提供一种掺金、掺铂单晶硅互换热敏电阻及其制作方法,属于温度敏感器技术领域。它主要采用在P型单晶硅中掺入金、铂两种杂质的方法,使电阻呈现负温度特征,其B值为3850K,B值的偏差分布小于±0.3%,使用温区为-50℃~100℃之间。由于该电阻元件的B值适中,互换性能好,又易制作,成本低廉,不失为一种用于配制具有线性输出的线性组件的理想元件。并可广泛适用于医疗仪器、食品工业、家用电器等行业的测温、控温等实用技术领域。
Application Date1987-05-07
Patent NumberZL87103486.3
Status授权后放弃
Application Number87103486.3
Document Type专利
Identifierhttp://ir.xjipc.cas.cn/handle/365002/3267
Collection中国科学院新疆理化技术研究所(2002年以前数据)
Recommended Citation
GB/T 7714
韦风辉,李国华,柳培立. 掺金、掺铂单晶硅互换热敏电阻及其制作方法. ZL87103486.3[P]. 1988-12-01.
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