掺金硅互换热敏电阻
阿帕尔,陶国强,陶明德
1988-06-23
Rights Holder中国科学院新疆理化技术研究所
Date Available2013-11-27
Country中国
Subtype发明
Abstract本发明属于半导体温度传感器领域。本发明采用氯化金涂层扩散,当金和本底净杂质浓度之比为1~1.5时,形成稳定性好,B值为来4000K~6000K,其均匀度优于0.1%的掺金硅热敏材料。利用该材料的双面高阻层做成串联式热敏电阻,经机械调值后,元件在-30~+50℃温区阻值互换精度为0.2%,高温(85℃)存放一年的稳定性优于0.3%。本发明可广泛地应用于工业、农业,尤其是医学、生物工程、化学等多方面的温度测量与控制。
Application Date1985-04-01
Patent NumberZL85102901.9
Status授权后放弃
Application Number85102901.9
Document Type专利
Identifierhttp://ir.xjipc.cas.cn/handle/365002/3262
Collection中国科学院新疆理化技术研究所(2002年以前数据)
Recommended Citation
GB/T 7714
阿帕尔,陶国强,陶明德. 掺金硅互换热敏电阻. ZL85102901.9[P]. 1988-06-23.
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