微型压敏电阻芯片材料及其制造方法
康雪雅,陶明德,韩英
1999-10-27
Rights Holder中国科学院新疆理化技术研究所
Date Available2013-11-27
Country中国
Subtype发明
Abstract本发明涉及半导体材料,尤其是微型压每电阻芯片材料及其制造方法,该芯片是以化学纯乙酸锌为主体,以三乙醇胺为溶剂,以柠檬酸为络合物,再加入有机盐,无机盐,稀土盐,用溶胶-凝胶法合成而成多元纳米压敏粉体材料,再用冷等静压技术和半导体晶片加工方法制成微型压敏电阻芯片,该芯片压敏电压范围从6-450V,非线性系数可从10-40,通流能力从2-50A,芯片尺寸从0.5×0.5-5×5mm↑[2]可调,根据粉体粒径,配方、成型,烧结、加工方法不同,可制得压敏电压从几伏到几百伏的压敏电阻芯片。
Application Date1997-06-18
Patent NumberLZ97112814.6
Status专利权的终止
Application Number97112814.6
Document Type专利
Identifierhttp://ir.xjipc.cas.cn/handle/365002/3221
Collection中国科学院新疆理化技术研究所(2002年以前数据)
Recommended Citation
GB/T 7714
康雪雅,陶明德,韩英. 微型压敏电阻芯片材料及其制造方法. LZ97112814.6[P]. 1999-10-27.
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