星用辐射效应探测器
范隆; 任迪远; 严荣良
2003-10-22
Rights Holder中国科学院新疆理化技术研究所
Date Available2013-11-27
Country中国
Subtype发明
Abstract一种与星上数据采集系统配套使用,检测粒子辐射对CMOS集成电路影响的星用CMOS辐射效应探测器,能完成对电离辐射敏感的CC4007电路N沟管阈电压值检测。主要由测量控制电路、恒流源电路、电压输出接口电路和被测CMOS4007组成,采用星上数据采集系统给出的一路测量启动脉冲控制,按时序对两片4007中6个N沟管阈电压依次测量,输出模拟电压信号送至星上数据采集系统的模数转换器ADC0816。该探测器具有功耗低、可靠性高的特点。
Application Date1999-02-02
Patent NumberZL99102022.7
Status专利权的终止
Application Number99102022.7
Document Type专利
Identifierhttp://ir.xjipc.cas.cn/handle/365002/3172
Collection中国科学院新疆理化技术研究所(2002年以前数据)
Recommended Citation
GB/T 7714
范隆,任迪远,严荣良. 星用辐射效应探测器[P]. 2003-10-22.
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