XJIPC OpenIR  > 材料物理与化学研究室
一种锰掺杂的负温度系数单晶硅热敏电阻
巴维真; 陈朝阳; 丛秀云
2007-10-26
Rights Holder中国科学院新疆理化技术研究所
Date Available2013-11-27
Country中国
Subtype发明
Abstract本发明涉及一种锰掺杂的负温度系数单晶硅热敏电阻,该热敏电阻通过金属锰真空高温扩散或硝酸锰涂层高温扩散将锰掺入单晶硅中,锰原子形成深施主能级,硅单晶成为高度补偿的半导体材料。温度升高,深能级俘获的载流子跃迁至导带,引起材料电阻率发生变化,从而呈现热敏特性,改变扩散温度和时间,即可实现其材料常数B值和25℃标称电阻的改变。
Application Date2003-11-20
Patent NumberZL200310116749.4
Status授权
Application Number200310116749.4
Document Type专利
Identifierhttp://ir.xjipc.cas.cn/handle/365002/3151
Collection材料物理与化学研究室
Recommended Citation
GB/T 7714
巴维真,陈朝阳,丛秀云. 一种锰掺杂的负温度系数单晶硅热敏电阻[P]. 2007-10-26.
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