XJIPC OpenIR  > 材料物理与化学研究室
对管式差分输出PMOS辐射剂量计
郭旗; 任迪远
2007-01-24
Rights Holder中国科学院新疆理化技术研究所
Date Available2013-11-27
Country中国
Subtype发明
Abstract本发明涉及一种对管式差分输出PMOS辐射剂量计,该剂量计包括对管式差分输出PMOS剂量计探头、测量偏置方法、剂量记录读出技术、温度补偿方法和退火效应修正方法;利用双p-沟道金属-氧化物-半导体晶体管pMOSFET构成的对管式差分输出的PMOS剂量测量探头;利用该探头构成的辐射剂量计;该剂量计的测量技术、读出技术;以及该剂量计所采用的温度补偿技术和对pMOSFET辐射响应退火效应的修正技术。
Application Date2004-11-17
Patent NumberZL200410094862.1
Status专利权的终止
Application Number200410094862.1
Document Type专利
Identifierhttp://ir.xjipc.cas.cn/handle/365002/3143
Collection材料物理与化学研究室
Recommended Citation
GB/T 7714
郭旗,任迪远. 对管式差分输出PMOS辐射剂量计. ZL200410094862.1[P]. 2007-01-24.
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