XJIPC OpenIR  > 材料物理与化学研究室
过渡金属多重掺杂负温度系数单晶硅热敏电阻
陈朝阳; 范艳伟; 丛秀云
2010-08-11
Rights Holder中国科学院新疆理化技术研究所
Date Available2013-11-27
Country中国
Subtype发明
Abstract本发明涉及一种过渡金属多重掺杂的负温度系数单晶硅热敏电阻,该热敏电阻采用涂源高温扩散方法,将过渡金属元素锰和铜作为掺杂剂,掺入P型单晶硅中;利用锰和铜在P型单晶硅中的杂质补偿性质,制备出珠状高B值低阻值热敏电阻,电学参数为50Ω—1.2 KΩ,材料B值4100—4500K。
Application Date2007-10-24
Patent NumberZL200710180002.3
Status授权
Application Number200710180002.3
Document Type专利
Identifierhttp://ir.xjipc.cas.cn/handle/365002/3095
Collection材料物理与化学研究室
Recommended Citation
GB/T 7714
陈朝阳,范艳伟,丛秀云. 过渡金属多重掺杂负温度系数单晶硅热敏电阻. ZL200710180002.3[P]. 2010-08-11.
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