Subject Area辐射物理与技术
CMOS电路辐射效应及其加固
严荣良; 张玲珊; 任迪远; 王宇; 朱辉; 吾勤之
Subtype中国科学院科技进步奖;
Award Level三等奖
1995
Funding Project中国科学院新疆理化技术研究所
Contribution Rank中国科学院新疆理化技术研究所、北京半导体器件三厂、中科院上海技物所
Document Type成果
Identifierhttp://ir.xjipc.cas.cn/handle/365002/2997
Collection中国科学院新疆理化技术研究所(2002年以前数据)
Recommended Citation
GB/T 7714
严荣良,张玲珊,任迪远,等. CMOS电路辐射效应及其加固. 中国科学院科技进步奖;. 1995.
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