Subject Area辐射物理与技术
抗高电离辐射MOS新介质与损伤模拟分析技术的研究
张国强; 王国彬; 严荣良; 任迪远; 余学峰; 高剑侠; 罗来会; 陆妩; 范隆; 高文钰; 郭旗; 魏锡智
Subtype新疆维吾尔自治区科技进步奖;
Award Level二等奖
1995
Funding Project中国科学院新疆理化技术研究所
Contribution Rank中国科学院新疆理化技术研究所
Document Type成果
Identifierhttp://ir.xjipc.cas.cn/handle/365002/2950
Collection中国科学院新疆理化技术研究所(2002年以前数据)
材料物理与化学研究室
Recommended Citation
GB/T 7714
张国强,王国彬,严荣良,等. 抗高电离辐射MOS新介质与损伤模拟分析技术的研究. 新疆维吾尔自治区科技进步奖;. 1995.
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