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学科主题: Materials Science ; Physics
题名:
Ni-Al-O diffusion barrier layer for high-kappa metal-oxide-semiconductor capacitor
作者: Wu D. Q.; Jia R.; Yao J. C.; Zhao H. S.; Chang A. M.
关键词: High-kappa gate dielectrics ; Leakage current density ; Er(2)O(3) ; Ni-Al-O ; Diffusion barrier layer
刊名: THIN SOLID FILMS
发表日期: 2011
DOI: 10.1016/j.tsf.2010.12.152
卷: 519, 期:10, 页:3358-3362
收录类别: SCI
英文摘要: Using amorphous Ni-AI-O (a-Ni-AI-O) thin film as the intermediate layer, poly-crystalline Er203 thin film was grown on a-Ni-AI-O/Si (p-type) via laser molecular beam epitaxy, forming the Er(2)O(3)/Ni-AI-O gate stack. It was found that the mean dielectric constant of the Er(2)O(3)/Ni-AI-O gate stack with an equivalent oxide thickness of 1.5 nm is about 17-23, the interfacial states density is about 3.16 x 10(12) cm(-2) and the stack gate leakage current density is as small as 4.1 x 10(-6) A/cm(2). Furthermore, The insertion of the Ni-AI-O thin film between the Er(2)O(3) gate dielectric and p-Si substrate prevents the oxygen from being out-diffused, which significantly improved the stability of gate stack, showing that the Er(2)O(3)/Ni-Al-O gate stack thin film could be used as an ideal gate oxide layer for the future Metal Oxide Semiconductor Field Effect Transistors.
WOS记录号: WOS:000289174300061
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内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/2792
Appears in Collections:材料物理与化学研究室_期刊论文

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作者单位: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China;CAS, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;NingXia Univ, Sch Phys & Elect Informat Sci, Yinchuan 750021, Peoples R China

Recommended Citation:
Wu D. Q.,Jia R.,Yao J. C.,et al. Ni-Al-O diffusion barrier layer for high-kappa metal-oxide-semiconductor capacitor[J]. THIN SOLID FILMS,2011-01-01,519(10):3358-3362.
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文件名: ni-al-o diffusion barrier layer for high-kappa metal-oxide-semiconductor capacitor.pdf
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