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Ni-Al-O diffusion barrier layer for high-kappa metal-oxide-semiconductor capacitor
Wu D. Q.; Jia R.; Yao J. C.; Zhao H. S.; Chang A. M.
2011
发表期刊THIN SOLID FILMS
ISSN0040-6090
卷号519期号:10页码:3358-3362
摘要Using amorphous Ni-AI-O (a-Ni-AI-O) thin film as the intermediate layer, poly-crystalline Er203 thin film was grown on a-Ni-AI-O/Si (p-type) via laser molecular beam epitaxy, forming the Er(2)O(3)/Ni-AI-O gate stack. It was found that the mean dielectric constant of the Er(2)O(3)/Ni-AI-O gate stack with an equivalent oxide thickness of 1.5 nm is about 17-23, the interfacial states density is about 3.16 x 10(12) cm(-2) and the stack gate leakage current density is as small as 4.1 x 10(-6) A/cm(2). Furthermore, The insertion of the Ni-AI-O thin film between the Er(2)O(3) gate dielectric and p-Si substrate prevents the oxygen from being out-diffused, which significantly improved the stability of gate stack, showing that the Er(2)O(3)/Ni-Al-O gate stack thin film could be used as an ideal gate oxide layer for the future Metal Oxide Semiconductor Field Effect Transistors.
关键词High-kappa Gate Dielectrics Leakage Current Density Er(2)o(3) Ni-al-o Diffusion Barrier Layer
学科领域Materials Science ; Physics
DOI10.1016/j.tsf.2010.12.152
收录类别SCI
WOS记录号WOS:000289174300061
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文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/2792
专题材料物理与化学研究室
作者单位Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China;CAS, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;NingXia Univ, Sch Phys & Elect Informat Sci, Yinchuan 750021, Peoples R China
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Wu D. Q.,Jia R.,Yao J. C.,et al. Ni-Al-O diffusion barrier layer for high-kappa metal-oxide-semiconductor capacitor[J]. THIN SOLID FILMS,2011,519(10):3358-3362.
APA Wu D. Q.,Jia R.,Yao J. C.,Zhao H. S.,&Chang A. M..(2011).Ni-Al-O diffusion barrier layer for high-kappa metal-oxide-semiconductor capacitor.THIN SOLID FILMS,519(10),3358-3362.
MLA Wu D. Q.,et al."Ni-Al-O diffusion barrier layer for high-kappa metal-oxide-semiconductor capacitor".THIN SOLID FILMS 519.10(2011):3358-3362.
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