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学科主题: Physics
题名: High energy-storage performance in Pb0.91La0.09(Ti0.65Zr0.35)O-3 relaxor ferroelectric thin films
作者: Hao Xihong; Wang Ying; Yang Jichun; An Shengli; Xu Jinbao
刊名: JOURNAL OF APPLIED PHYSICS
发表日期: 2012
DOI: 10.1063/1.4768461
卷: 112, 期:11, 页:-
收录类别: SCI
资助者: National Natural Science Foundation of China 51002071; Program for Young Talents of Science and Technology in Universities of Inner Mongolia Autonomous Region; Natural Science Foundation of Inner Mongolia 2010BS0802; Xinjiang Key Laboratory of Electronic Information Materials and Devices XJYS0901-2011-01
摘要: In this work, 1-mu m-thick relaxor ferroelectric (FE) films with a typical composition of Pb0.91La0.09(Ti0.65Zr0.35)O-3 (PLZT 9/65/35) were successfully deposited on platinum-buffered silicon substrates via a sol-gel technique. The microstructure, electrical properties, and energy-storage performance of the obtained thin films were investigated in detail. X-ray diffraction (XRD) analysis and field-emission scanning electron microscopy pictures indicated that the crystallized thin films showed a random orientation with uniform and dense microstructure. Electrical measurements illustrated that the relaxor FE thin films had a considerable capacitance density of 925 nF/cm(2) at 1MHz and a higher critical breakdown field of 2177 kV/cm. As a result, a large recoverable energy-storage density of 28.7 J/cm(3) was obtained in the thin films at room temperature. Moreover, good charge-discharge endurance was also realized in the FE films, confirmed by the repeated polarizationelectric field loops.
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内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/2747
Appears in Collections:新疆维吾尔自治区电子信息材料与器件重点实验室_期刊论文

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作者单位: Inner Mongolia Univ Sci & Technol, Sch Met & Mat, Baotou 014010, Peoples R China;Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China

Recommended Citation:
Hao Xihong,Wang Ying,Yang Jichun,et al. High energy-storage performance in Pb0.91La0.09(Ti0.65Zr0.35)O-3 relaxor ferroelectric thin films[J]. JOURNAL OF APPLIED PHYSICS,2012,112(11):-.
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