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学科主题: Physics
题名: Quantitative separation of radiation induced charges for gate controlled later PNP bipolar transistors
作者: Xi Shan-Bin; Lu Wu; Ren Di-Yuan; Zhou Dong; Wen Lin; Sun Jing; Wu Xue
关键词: gate sweep technique ; gate control ; lateral PNP bipolar transistor ; charge separation
刊名: ACTA PHYSICA SINICA
发表日期: 2012
DOI: 10.7498/aps.61.236103
卷: 61, 期:23, 页:374-380
收录类别: SCI
资助者: National Natural Science Foundation of China 10975182
摘要: A new test structure of gate controlled lateral PNP bipolar transistors designed and fabricated. An independent gate terminal is patterned on the oxide layer above the active base region of normal lateral PNP bipolar transistors. According to the gate sweep technique, by sweeping the voltage applied to the gate terminal, one can obtain the characteristic of base current versus gate voltage. The quantitative variations of oxide trapped charges and interface traps are analytically estimated and numerically calculated, and the radiation induced defects in the gate controlled lateral PNP bipolar transistors during Co-60-gamma irradiation and annealing at room temperature are separated independently. The test structures and measurements of the bipolar transistors used in the experiment are introduced in detail in this paper.
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内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/2735
Appears in Collections:新疆维吾尔自治区电子信息材料与器件重点实验室_期刊论文

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栅控横向PNP双极晶体管辐照感生电荷的定量分离.pdf(700KB)期刊论文作者接受稿开放获取View 联系获取全文

作者单位: Xinjiang Tech Inst Phys & Chem CAS, Urumqi 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China

Recommended Citation:
Xi Shan-Bin,Lu Wu,Ren Di-Yuan,et al. Quantitative separation of radiation induced charges for gate controlled later PNP bipolar transistors[J]. ACTA PHYSICA SINICA,2012,61(23):374-380.
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文件名: 栅控横向PNP双极晶体管辐照感生电荷的定量分离.pdf
格式: Adobe PDF
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