Quantitative separation of radiation induced charges for gate controlled later PNP bipolar transistors
Xi Shan-Bin; Lu Wu; Ren Di-Yuan; Zhou Dong; Wen Lin; Sun Jing; Wu Xue
2012
Source PublicationACTA PHYSICA SINICA
ISSN1000-3290
Volume61Issue:23Pages:374-380
Abstract

A new test structure of gate controlled lateral PNP bipolar transistors designed and fabricated. An independent gate terminal is patterned on the oxide layer above the active base region of normal lateral PNP bipolar transistors. According to the gate sweep technique, by sweeping the voltage applied to the gate terminal, one can obtain the characteristic of base current versus gate voltage. The quantitative variations of oxide trapped charges and interface traps are analytically estimated and numerically calculated, and the radiation induced defects in the gate controlled lateral PNP bipolar transistors during Co-60-gamma irradiation and annealing at room temperature are separated independently. The test structures and measurements of the bipolar transistors used in the experiment are introduced in detail in this paper.

KeywordGate Sweep Technique Gate Control Lateral Pnp Bipolar Transistor Charge Separation
Subject AreaPhysics
DOI10.7498/aps.61.236103
Indexed BySCI
WOS IDWOS:000316733700051
Citation statistics
Cited Times:6[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/2735
Collection新疆维吾尔自治区电子信息材料与器件重点实验室
AffiliationXinjiang Tech Inst Phys & Chem CAS, Urumqi 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
Recommended Citation
GB/T 7714
Xi Shan-Bin,Lu Wu,Ren Di-Yuan,et al. Quantitative separation of radiation induced charges for gate controlled later PNP bipolar transistors[J]. ACTA PHYSICA SINICA,2012,61(23):374-380.
APA Xi Shan-Bin.,Lu Wu.,Ren Di-Yuan.,Zhou Dong.,Wen Lin.,...&Wu Xue.(2012).Quantitative separation of radiation induced charges for gate controlled later PNP bipolar transistors.ACTA PHYSICA SINICA,61(23),374-380.
MLA Xi Shan-Bin,et al."Quantitative separation of radiation induced charges for gate controlled later PNP bipolar transistors".ACTA PHYSICA SINICA 61.23(2012):374-380.
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