Quantitative separation of radiation induced charges for gate controlled later PNP bipolar transistors
Xi Shan-Bin; Lu Wu; Ren Di-Yuan; Zhou Dong; Wen Lin; Sun Jing; Wu Xue
2012
发表期刊ACTA PHYSICA SINICA
ISSN1000-3290
卷号61期号:23页码:374-380
摘要

A new test structure of gate controlled lateral PNP bipolar transistors designed and fabricated. An independent gate terminal is patterned on the oxide layer above the active base region of normal lateral PNP bipolar transistors. According to the gate sweep technique, by sweeping the voltage applied to the gate terminal, one can obtain the characteristic of base current versus gate voltage. The quantitative variations of oxide trapped charges and interface traps are analytically estimated and numerically calculated, and the radiation induced defects in the gate controlled lateral PNP bipolar transistors during Co-60-gamma irradiation and annealing at room temperature are separated independently. The test structures and measurements of the bipolar transistors used in the experiment are introduced in detail in this paper.

关键词Gate Sweep Technique Gate Control Lateral Pnp Bipolar Transistor Charge Separation
学科领域Physics
DOI10.7498/aps.61.236103
收录类别SCI
WOS记录号WOS:000316733700051
引用统计
被引频次:6[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/2735
专题新疆维吾尔自治区电子信息材料与器件重点实验室
作者单位Xinjiang Tech Inst Phys & Chem CAS, Urumqi 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
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Xi Shan-Bin,Lu Wu,Ren Di-Yuan,et al. Quantitative separation of radiation induced charges for gate controlled later PNP bipolar transistors[J]. ACTA PHYSICA SINICA,2012,61(23):374-380.
APA Xi Shan-Bin.,Lu Wu.,Ren Di-Yuan.,Zhou Dong.,Wen Lin.,...&Wu Xue.(2012).Quantitative separation of radiation induced charges for gate controlled later PNP bipolar transistors.ACTA PHYSICA SINICA,61(23),374-380.
MLA Xi Shan-Bin,et al."Quantitative separation of radiation induced charges for gate controlled later PNP bipolar transistors".ACTA PHYSICA SINICA 61.23(2012):374-380.
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