中国科学院新疆理化技术研究所机构知识库
Advanced  
XJIPC OpenIR  > 材料物理与化学研究室  > 期刊论文
学科主题: Physics
题名: Origin of the redshift of the luminescence peak in InGaN light-emitting diodes exposed to Co-60 gamma-ray irradiation
作者: Li Y. L.; Wang X. J.; He S. M.; Zhang B.; Sun L. X.; Li Y. D.; Guo Q.; Chen C. Q.; Chen Z. H.; Lu W.
刊名: JOURNAL OF APPLIED PHYSICS
发表日期: 2012
DOI: 10.1063/1.4770465
卷: 112, 期:12, 页:-
收录类别: SCI
资助者: National Basic Research Program of China 2011CB925604; National Nature Science Foundation of China 10990100, 61274141, 11274330; Hundred Talents Program of the Chinese Academy of Sciences; Shanghai Pujiang Program
摘要: The redshift (similar to 54 meV) of the photoluminescence (PL) peak energy of blue InGaN/GaN light-emitting diodes exposed to Co-60 gamma-rays was observed. Time-resolved PL indicates that the PL radiative time increases along with irradiation does. The temperature-dependent PL and photoreflectance techniques show that gamma-ray irradiance leads to higher carrier localization energies and larger Stokes' shift, respectively. These facts suggest that the redshifts of the PL peak emission introduced by gamma-ray irradiance mainly originated from the enhancement of indium fluctuation. The cathodoluminescent images of the samples before and after gamma-ray irradiation are compared to verify the results. (c) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4770465
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/2733
Appears in Collections:材料物理与化学研究室_期刊论文

Files in This Item:
File Name/ File Size Content Type Version Access License
origin of the redshift of the luminescence peak in ingan light-emitting diodes exposed to co-60 gamma-ray irradiation.pdf(1128KB)期刊论文作者接受稿开放获取View 联系获取全文

作者单位: Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China;Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Sch Optoelect Sci & Engn, Wuhan 430074, Peoples R China;Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Fudan Univ, Surface Phys Lab, Dept Phys, Shanghai 200433, Peoples R China;Fudan Univ, Adv Mat Lab, Shanghai 200433, Peoples R China

Recommended Citation:
Li Y. L.,Wang X. J.,He S. M.,et al. Origin of the redshift of the luminescence peak in InGaN light-emitting diodes exposed to Co-60 gamma-ray irradiation[J]. JOURNAL OF APPLIED PHYSICS,2012,112(12):-.
Service
Recommend this item
Sava as my favorate item
Show this item's statistics
Export Endnote File
Google Scholar
Similar articles in Google Scholar
[Li Y. L.]'s Articles
[Wang X. J.]'s Articles
[He S. M.]'s Articles
CSDL cross search
Similar articles in CSDL Cross Search
[Li Y. L.]‘s Articles
[Wang X. J.]‘s Articles
[He S. M.]‘s Articles
Related Copyright Policies
Null
Social Bookmarking
Add to CiteULike Add to Connotea Add to Del.icio.us Add to Digg Add to Reddit
文件名: origin of the redshift of the luminescence peak in ingan light-emitting diodes exposed to co-60 gamma-ray irradiation.pdf
格式: Adobe PDF
所有评论 (0)
暂无评论
 
评注功能仅针对注册用户开放,请您登录
您对该条目有什么异议,请填写以下表单,管理员会尽快联系您。
内 容:
Email:  *
单位:
验证码:   刷新
您在IR的使用过程中有什么好的想法或者建议可以反馈给我们。
标 题:
 *
内 容:
Email:  *
验证码:   刷新

Items in IR are protected by copyright, with all rights reserved, unless otherwise indicated.

 

 

Valid XHTML 1.0!
Powered by CSpace