3d simulation of heavy ion induced charge collection of single event effects in sige heteroj unction bipolar transistor
Zhang Jin-Xin; Guo Hong-Xia; Guo Qi; Wen Lin; Cui Jiang-Wei; Xi Shan-Bin; Wang Xin; Deng Wei
2013
发表期刊ACTA PHYSICA SINICA
ISSN1000-3290
卷号62期号:4
摘要

In this paper, we establish a three-dimensional numerical simulation model for SiGe heterojunction bipolar transistor by the technology computer aided design simulations. In the simulation we investigate the charge collection mechanism by heavy ion radiation in SiGe HBT technology. The results show that the charge collected by the terminals is a strong function of the ion striking position. The sensitive area of charge collection for each terminal is identified based on the analyses of the device structure and simulation results. For a normal strike within and around the area of the collector/substrate junction, most of the electrons and holes are collected by the collector and substrate terminals, respectively. For an ion strike between the shallow trench edges surrounding the emitter, the base collects a large quantity of charge, while the emitter collects a negligible quantity of charge.

关键词Sige Heterojunction Bipolar Transistor Single Event Effect Charge Collection Three-dimensional Numerical Simulation
学科领域Physics
DOI10.7498/aps.62.048501
收录类别SCI
WOS记录号WOS:000316859500071
引用统计
被引频次:11[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/2707
专题新疆维吾尔自治区电子信息材料与器件重点实验室
作者单位Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China;Northwest Inst Nucl Technol, Xian 710024, Peoples R China;Univ Chinese Acad Sci, Beijing 100049, Peoples R China
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Zhang Jin-Xin,Guo Hong-Xia,Guo Qi,et al. 3d simulation of heavy ion induced charge collection of single event effects in sige heteroj unction bipolar transistor[J]. ACTA PHYSICA SINICA,2013,62(4).
APA Zhang Jin-Xin.,Guo Hong-Xia.,Guo Qi.,Wen Lin.,Cui Jiang-Wei.,...&Deng Wei.(2013).3d simulation of heavy ion induced charge collection of single event effects in sige heteroj unction bipolar transistor.ACTA PHYSICA SINICA,62(4).
MLA Zhang Jin-Xin,et al."3d simulation of heavy ion induced charge collection of single event effects in sige heteroj unction bipolar transistor".ACTA PHYSICA SINICA 62.4(2013).
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