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学科主题: Physics
题名: 3d simulation of heavy ion induced charge collection of single event effects in sige heteroj unction bipolar transistor
作者: Zhang Jin-Xin; Guo Hong-Xia; Guo Qi; Wen Lin; Cui Jiang-Wei; Xi Shan-Bin; Wang Xin; Deng Wei
关键词: SiGe heterojunction bipolar transistor ; single event effect ; charge collection ; three-dimensional numerical simulation
刊名: ACTA PHYSICA SINICA
发表日期: 2013
DOI: 10.7498/aps.62.048501
卷: 62, 期:4, 页:-
收录类别: SCI
资助者: National Natural Science Foundation of China 61274106
摘要: In this paper, we establish a three-dimensional numerical simulation model for SiGe heterojunction bipolar transistor by the technology computer aided design simulations. In the simulation we investigate the charge collection mechanism by heavy ion radiation in SiGe HBT technology. The results show that the charge collected by the terminals is a strong function of the ion striking position. The sensitive area of charge collection for each terminal is identified based on the analyses of the device structure and simulation results. For a normal strike within and around the area of the collector/substrate junction, most of the electrons and holes are collected by the collector and substrate terminals, respectively. For an ion strike between the shallow trench edges surrounding the emitter, the base collects a large quantity of charge, while the emitter collects a negligible quantity of charge.
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内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/2707
Appears in Collections:新疆维吾尔自治区电子信息材料与器件重点实验室_期刊论文

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重离子导致的锗硅异质结双极晶体管单粒子效应电荷收集三维数值模拟.pdf(6658KB)期刊论文作者接受稿开放获取View 联系获取全文

作者单位: Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China;Northwest Inst Nucl Technol, Xian 710024, Peoples R China;Univ Chinese Acad Sci, Beijing 100049, Peoples R China

Recommended Citation:
Zhang Jin-Xin,Guo Hong-Xia,Guo Qi,et al. 3d simulation of heavy ion induced charge collection of single event effects in sige heteroj unction bipolar transistor[J]. ACTA PHYSICA SINICA,2013,62(4):-.
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文件名: 重离子导致的锗硅异质结双极晶体管单粒子效应电荷收集三维数值模拟.pdf
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