3d simulation of heavy ion induced charge collection of single event effects in sige heteroj unction bipolar transistor
Zhang Jin-Xin; Guo Hong-Xia; Guo Qi; Wen Lin; Cui Jiang-Wei; Xi Shan-Bin; Wang Xin; Deng Wei
2013
Source PublicationACTA PHYSICA SINICA
ISSN1000-3290
Volume62Issue:4
Abstract

In this paper, we establish a three-dimensional numerical simulation model for SiGe heterojunction bipolar transistor by the technology computer aided design simulations. In the simulation we investigate the charge collection mechanism by heavy ion radiation in SiGe HBT technology. The results show that the charge collected by the terminals is a strong function of the ion striking position. The sensitive area of charge collection for each terminal is identified based on the analyses of the device structure and simulation results. For a normal strike within and around the area of the collector/substrate junction, most of the electrons and holes are collected by the collector and substrate terminals, respectively. For an ion strike between the shallow trench edges surrounding the emitter, the base collects a large quantity of charge, while the emitter collects a negligible quantity of charge.

KeywordSige Heterojunction Bipolar Transistor Single Event Effect Charge Collection Three-dimensional Numerical Simulation
Subject AreaPhysics
DOI10.7498/aps.62.048501
Indexed BySCI
WOS IDWOS:000316859500071
Citation statistics
Cited Times:11[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/2707
Collection新疆维吾尔自治区电子信息材料与器件重点实验室
材料物理与化学研究室
AffiliationChinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China;Northwest Inst Nucl Technol, Xian 710024, Peoples R China;Univ Chinese Acad Sci, Beijing 100049, Peoples R China
Recommended Citation
GB/T 7714
Zhang Jin-Xin,Guo Hong-Xia,Guo Qi,et al. 3d simulation of heavy ion induced charge collection of single event effects in sige heteroj unction bipolar transistor[J]. ACTA PHYSICA SINICA,2013,62(4).
APA Zhang Jin-Xin.,Guo Hong-Xia.,Guo Qi.,Wen Lin.,Cui Jiang-Wei.,...&Deng Wei.(2013).3d simulation of heavy ion induced charge collection of single event effects in sige heteroj unction bipolar transistor.ACTA PHYSICA SINICA,62(4).
MLA Zhang Jin-Xin,et al."3d simulation of heavy ion induced charge collection of single event effects in sige heteroj unction bipolar transistor".ACTA PHYSICA SINICA 62.4(2013).
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